Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$470.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1653K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$550.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$634.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1652K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$740.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$855.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1651K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$548.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$632.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1649K

Tellurium (Te) Sputtering Target

Price range: $316.00 through $833.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tellurium (Te) Sputtering Target

CAS No.

13494-80-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 127.60 g/mol

Melting Point

449.5 °C

Boiling Point

 988 °C

Density

6.24 g/cm³

Product Codes

NCZ-1361K

Terbium (Tb) Sputtering Target

Price range: $510.00 through $1,249.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Terbium (Tb) Sputtering Target

CAS No.

7440-27-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

158.93 g/mol

Melting Point

1,356 °C

Boiling Point

3,123 °C

Density

 8.23 g/cm³

Product Codes

NCZ-1362K

Tin (Sn) Sputtering Target

Price range: $63.00 through $441.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tin (Sn) Sputtering Target

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2,602 °C

Density

7.31 g/cm³

Product Codes

NCZ-1306K

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$332.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$381.00

Product 

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1633K

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 2”, Thickness: 0.125”

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$175.00

Product 

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

 231.9 °C

Boiling Point

2602 °C

Density

7.31 g/cm³

Product Codes

NCZ-2585K

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$583.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$673.00

Product 

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1633K

Tin (Sn) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$117.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$131.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1643K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$97.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$97.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$107.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1646K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$103.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$114.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1645K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$138.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$155.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1644K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$169.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$191.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1642K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$226.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$257.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1641K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$301.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$345.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1640K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$480.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$553.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1639K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$629.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1638K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$546.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$558.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$643.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1637K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$542.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$625.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1636K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$579.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$668.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1635K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$504.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$581.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1634K

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$774.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$895.00

Product 

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1623K

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$780.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$902.00

Product 

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1622K

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size:2”, Thickness: 0.125”

$762.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size:2”, Thickness: 0.125”

$881.00

Product 

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size:2'', Thickness: 0.125''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1624K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$542.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Even very low quantities of contaminants can be detected with the aid of the sputtering target, allowing for the determination of the target material's composition.

Applications for sputtering targets are also found in space. One type of space weathering is sputtering, which modifies the chemical and physical characteristics of airless worlds like the Moon and asteroids.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$625.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1632K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$438.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$504.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1631K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$516.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$595.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1630K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$586.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$676.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1629K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$565.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$652.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1628K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$530.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.