Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$447.00

Product 

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1761K

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$451.00

Product 

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1760K

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$388.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 5”, Thickness: 0.125”

$388.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 5”, Thickness: 0.125”

$451.00

Product 

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 5'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1759K

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 5”, Thickness: 0.250”

$417.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 5”, Thickness: 0.250”

$486.00

Product 

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 5'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1758K

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 6”, Thickness: 0.125”

$414.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 6”, Thickness: 0.125”

$482.00

Product 

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 6'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1757K

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$426.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$496.00

Product 

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 6'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1756K

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 8”, Thickness: 0.125”

$445.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 8”, Thickness: 0.125”

$518.00

Product 

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 8'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1755K

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$456.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$531.00

Product 

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 8'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1754K

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$226.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$260.00

Product 

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1741K

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$475.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$553.00

Product 

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1740K

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$710.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$829.00

Product 

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1739K

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$696.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$812.00

Product 

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1738K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$78.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$86.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1753K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$78.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$86.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1752K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$200.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$230.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1751K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$294.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1750K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$261.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$301.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1749K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$265.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$306.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1748K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$307.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$355.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1747K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$357.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$414.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1746K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6”, Thickness: 0.125”

$475.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6”, Thickness: 0.125”

$553.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1745K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$420.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Even very low quantities of contaminants can be detected with the aid of the sputtering target, allowing for the determination of the target material's composition.

Applications for sputtering targets are also found in space. One type of space weathering is sputtering, which modifies the chemical and physical characteristics of airless worlds like the Moon and asteroids.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$488.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1744K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8”, Thickness: 0.125”

$380.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8”, Thickness: 0.125”

$441.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1743K

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$390.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$453.00

Product 

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1742K

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$76.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$84.00

Product 

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1737K

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$103.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$116.00

Product 

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1736K

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$169.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Even very low quantities of contaminants can be detected with the aid of the sputtering target, allowing for the determination of the target material's composition.

Applications for sputtering targets are also found in space. One type of space weathering is sputtering, which modifies the chemical and physical characteristics of airless worlds like the Moon and asteroids.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$193.00

Product 

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1735K

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$189.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$217.00

Product 

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1734K

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$346.00

Applications of Sputtering Targets;

For film deposition, sputtering targets are employed. A sputtering technique called "deposition made by sputter targets" entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Targets are etched using semiconductor sputtering targets. When etching anisotropy is required to a great degree and selectivity is not an issue, sputter etching is the method of choice. By etching away the target material, sputter targets are also utilized for investigation. In one instance, the target sample is sputtered at a steady pace in secondary ion spectroscopy (SIMS). Using mass spectrometry, the concentration and identity of the spewed atoms are determined when the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$401.00

Product 

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1733K

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$384.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$446.00

Product 

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1732K

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$360.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.