Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

Price range: $494.00 through $2,320.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/445  5 pieces/2090                            Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 100

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

Price range: $494.00 through $2,320.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/445  5 pieces/2090                            Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 111

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready, Dopant: Iron (N Type)

Price range: $760.00 through $3,641.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/685  5 pieces/3280                       Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600± 25 μm, Orientation: 100

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Iron ( N type )
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1
Resistivity  1E7 Ohmcm

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111 , Single Side Polished, EPI-Ready, Dopant: Iron (N Type)

Price range: $760.00 through $3,641.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/685  5 pieces/3280                            Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600± 25 μm, Orientation: 111

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Iron (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1
Resistivity  1E7 Ohmcm

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350±25 μm, Orientation: 100, Single Side Polished, EPI-Ready

Price range: $399.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/360  5 pieces/1640                            Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

Price range: $399.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/360  5 pieces/1640                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 111

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

Price range: $383.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/345  5 pieces/1640                            Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

Price range: $383.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/345 € 5 pieces/1640 € Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 111

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Gallium Arsenide (GaAs) Wafer, Size: 4”, Thickness: 300± 25 μm, Double Side Polished, EPI-ready

Price range: $219.00 through $4,418.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/198 € 5 pieces/935 € 25 pieces/3980 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  4”
Thickness (μm)  300± 25
Polished  Double Side
Dopant  Undoped
Orientation  100
Resistivity   1 E8
Mobility  4500
EPD  ≤5000
Growth method  VGF
OF Length  32.5±1
IF Length  18±1

Applications:

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 350±25 μm, Single Side Polished

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Silicon (N Type)
Orientation  (100)15 deg off toward <111>A±0.5
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  32±1
IF Length   18±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 625±25 μm, Single Side Polished, EPI-ready

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990    Please ask for stock status before placing an order on wafer products   Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 625±25 μm, Single Side Polished

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  4”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Silicon (N Type)
Orientation  (100)
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  32±1
IF Length   18±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 350± 25 μm, Single Side Polished, EPI-ready, Mobility: 1000-3000

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 350± 25 μm, Mobility: 1000-3000

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  4”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Silicon (N Type)
Orientation  (100)2deg off toward <011>±0.5
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  32±1
IF Length   18±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 600±25 μm, Double Side Polished, EPI-ready

Price range: $186.00 through $4,385.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/168€ 5 pieces/830€ 25 pieces/3950€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 4”, Double Side Polished, Thickness: 600± 25 μm, EPI-ready Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  4”
Thickness (μm)  600± 25
Polished  Double Side
Dopant  Undoped
Orientation  (100) 
Resistivity   1 E8
Mobility  4500
EPD  ≤5000
Growth method  VGF
OF Length  32,5±1
IF Length  18±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 640±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N-type)

Price range: $153.00 through $3,191.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/138€ 5 pieces/640€ 25 pieces/2875€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 4”, Single Side Polished, Thickness: 640± 25 μm, EPI-ready, Dopant: Silicon (N-type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  4”
Thickness (μm)  640± 25
Polished  Single Side
Dopant  Silicon (N-Type)
Orientation  (100) 2 deg off toward<111>A±0.5
Resistivity   (1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  32±1
IF Length  18±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $149.00 through $2,875.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/135  5 pieces/635  25 pieces/2590  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Single Side Polished

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Silicon ( N type )
Orientation  (100)15 deg off toward <111>A±0.5
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, EPI-ready

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Silicon (N type)
Orientation  (100)
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready, Mobility: 1000-3000

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Mobility: 1000-3000

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Silicon (N type)
Orientation  (100)2 deg off toward <111>A±0.5
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Double Side Polished

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Double Side
Dopant  None
Orientation  (100)
Resistivity   1 E8
Mobility  2000
EPD  ≤5000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready, Dopant: Zinc (P Type)

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Dopant: Zinc (P Type)

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Zinc (P Type)
Orientation  (100)15 deg off toward<111A>
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 400±25 μm, Double Side Polished, EPI-ready

Price range: $142.00 through $2,192.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/128€ 5 pieces/490€ 25 pieces/1975€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 400± 25 μm, EPI-ready  Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  400± 25
Polished  Double Side
Dopant  Undoped
Orientation  100
Resistivity   1 E8
Mobility  2000
EPD  ≤5000
Growth method  VGF
OF Length  17±1
IF Length  7±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready, Dopant: Zinc (P Type)

Price range: $139.00 through $2,081.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/126€ 5 pieces/480€ 25 pieces/1875€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 350± 25 μm, EPI-ready, Dopant: Zinc (P Type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Double Side
Dopant  Zinc (P Type)
Orientation  (100) = 0 deg off toward <111A>
Resistivity  ( 1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length  7±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 450±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N Type)

Price range: $126.00 through $1,859.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/114€ 5 pieces/445€ 25 pieces/1675€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Single Side Polished, Thickness: 450± 25 μm, EPI-ready, Dopant: Silicon (N Type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  450± 25
Polished  Single Side
Dopant  Silicon (N Type)
Orientation  (100) =2 deg off toward<111A>± 0.5
Resistivity  ( 1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length  7±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Fused Silica Wafer, Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm

Price range: $71.00 through $1,498.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!!

Fused Silica Wafer

Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm

Technical Properties:

Quality Prime
Materials Fused Silica
Size (inch) 6”
Orientation
Coating
Thickness (μm) 700 ± 25
Doping
Resistivity (ohm.cm)
Polished Double Side
Fused silica – also referred as fused quartz- is an amorphous phase of silica. Compared to borosilicate wafers, fused silica has no additives. Is almost chemically inactive. Has a very high thermal resistance. Has an improved optical transmission in deep UV (ultraviolet). Silica dust particles are deposited on the substrate first, solidification of these molten particles creates a pure fused phase on the surface with the help of flame hydrolysis.

Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $71.00 through $1,498.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!! 

Fused Silica Wafer

Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials Fused Silica
Size (inch) 4”
Orientation  
Coating  
Thickness (μm) 500 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
Fused silica – also referred as fused quartz- is an amorphous phase of silica. Compared to borosilicate wafers, fused silica has no additives. Is almost chemically inactive. Has a very high thermal resistance. Has an improved optical transmission in deep UV (ultraviolet). Silica dust particles are deposited on the substrate first, solidification of these molten particles creates a pure fused phase on the surface with the help of flame hydrolysis.

Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 1000 ± 25 μm

Price range: $54.00 through $1,054.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/49 € 5 pieces/210 € 25 pieces/950 € Please contact us for quotes on larger quantities !!!

Fused Silica Wafer

Size: 4”, 2-Side Polished, Thickness: 1000 ± 25 μm

Technical Properties:

Quality Prime
Materials Fused Silica
Size(inch) 4”
Orientation
Coating
Thickness (μm) 1000 ± 25
Doping
Resistivity(ohm.cm)
Polished Double Side
Fused silica – also referred as fused quartz- is an amorphous phase of silica. Compared to borosilicate wafers, fused silica has no additives. Is almost chemically inactive. Has a very high thermal resistance. Has an improved optical transmission in deep UV (ultraviolet). Silica dust particles are deposited on the substrate first, solidification of these molten particles creates a pure fused phase on the surface with the help of flame hydrolysis.

Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

Price range: $106.00 through $2,331.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/96 € 5 pieces/440 € 25 pieces/2100 €                       Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (X-Cut)
Coating  
Thickness (μm) 200 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm

Price range: $93.00 through $1,626.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/84 € 5 pieces/325 € 25 pieces/1465 €                         Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (X-Cut)
Coating  
Thickness (μm) 300 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $93.00 through $1,626.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/84 € 5 pieces/325 € 25 pieces/1465 € Quartz Wafer, (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm Please contact us for quotes on larger quantities !!!

Quartz Wafer

(AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (AT -Cut)
Coating  
Thickness (μm) 500 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm

Price range: $93.00 through $1,626.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/84 € 5 pieces/325 € 25 pieces/1465 € Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (ST -Cut)
Coating
Thickness (μm) 625 ± 25
Doping
Resistivity (ohm.cm)
Polished One Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $57.00 through $710.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/52 € 5 pieces/160 € 25 pieces/640 € Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 2”
Orientation (X-Cut)
Coating
Thickness (μm) 500 ± 25
Doping
Resistivity (ohm.cm)
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 3000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 200 ± 10 μm

Price range: $89.00 through $1,515.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/81 € 5 pieces/305 € 25 pieces/1365 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 200 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 200 ± 10
Doping Phosphor
Resistivity (ohm.cm) 3000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 5000 – 500000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 10 μm

Price range: $89.00 through $1,515.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/81 € 5 pieces/305 € 25 pieces/1365 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 300 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 300 ± 10
Doping Phosphor
Resistivity (ohm.cm) 5000 - 500000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), None Doped, Resistivity: 1000 – 10000 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $87.00 through $1,459.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/79 € 5 pieces/295 € 25 pieces/1315 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 525 ± 25
Doping
Resistivity (ohm.cm) 1000 - 10000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime FZ-Si Wafer, Size: 4”, Orientation: (111), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 20 μm

Price range: $73.00 through $1,498.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/66 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (111), None Doped, 2-Side Polished, Thickness: 300 ± 20 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (111)
Coating  
Thickness (μm) 300 ± 20
Doping  
Resistivity (ohm.cm) 10000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 2000 – 4000 (ohm.cm), 1-Side Polished, Thickness: 300 ± 10 μm

Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/225 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 300 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 300 ± 10
Doping Boron
Resistivity (ohm.cm) 2000 - 4000
Polished One Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime FZ-Si Wafer, Size: 3”, Orientation: (100), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 380 ± 25 μm

Price range: $92.00 through $1,543.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/83 € 5 pieces/310 € 25 pieces/1390 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 3”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 380 ± 25 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 3”
Orientation (100)
Coating  
Thickness (μm) 380 ± 25
Doping  
Resistivity (ohm.cm) 10000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime FZ-Si Wafer, Size: 2”, Orientation: (100), Phosphor Doped, Resistivity: 7000 – 8000 (ohm.cm), 2-Side Polished, Thickness: 250 ± 15 μm

Price range: $63.00 through $821.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 2”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 250 ± 15 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 2”
Orientation (100)
Coating
Thickness (μm) 250 ± 15
Doping Phosphor
Resistivity (ohm.cm) 7000 - 8000
Polished Double Side
                Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime Si+SiO2 Wafer (dry), Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

Price range: $87.00 through $1,459.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/79 € 5 pieces/295 € 25 pieces/1315 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 6”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 6”
Orientation (100)
Coating 200 nm
Thickness (μm) 675 ± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/225 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 4”
Orientation (100)
Coating 100 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 4”
Orientation (100)
Coating 200 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 300 nm
Thickness (μm) 500 ± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.01 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/265 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 500 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 0.001 - 0.01
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 300 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 400 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

Price range: $78.00 through $1,237.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/71 € 5 pieces/255 € 25 pieces/1115 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 1500 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

Price range: $76.00 through $1,182.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/69 € 5 pieces/245 € 25 pieces/1065 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (111)
Coating 1000 nm
Thickness (μm) 525 ± 25
Doping Phosphor
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Price range: $51.00 through $943.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/46 € 5 pieces/190 € 25 pieces/850 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 3”
Orientation (100)
Coating 100 nm
Thickness (μm) 380 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

Price range: $64.00 through $821.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/58 € 5 pieces/190 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 3”
Orientation (100)
Coating 300 nm
Thickness (μm) 380 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (111), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

Price range: $67.00 through $960.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/61 € 5 pieces/205 € 25 pieces/865 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 3”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 3”
Orientation (111)
Coating 500 nm
Thickness (μm) 581 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Price range: $60.00 through $772.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/54 € 5 pieces/175 € 25 pieces/690 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (dry)

Size: 2”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 2”
Orientation (100)
Coating 100 nm
Thickness (μm) 279 ± 20
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Price range: $63.00 through $828.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 2”, Orientation: (111), Boron Doped, 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 2”
Orientation (111)
Coating 500 nm
Thickness (μm) 500 ± 25
Doping Boron
Resistivity (ohm.cm) 1-20
Polished Double  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Coin Style Single Wafer Shipper, 2’’ / 51 mm , Natural PP

Price range: $7.00 through $49.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece: 7 € 5 pieces: 29 € 10 pieces: 44 € Coin Style Single Wafer Shipper, 2’’ / 51 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø51 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene

Product #

Wafer Size

Dimensions

Material

NG01WS0101 2” / 51mm Ø61 x 13 mm Natural translucent PP
  WAFER SHIPPER FEATURES •  For shipping and storage of 2'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 2" (51mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 3’’ / 76 mm , Natural PP

Price range: $8.70 through $53.00
Select options This product has multiple variants. The options may be chosen on the product page
1 adet : 7.8€ 5 adet:  32€ 10 adet: 48€ Coin Style Single Wafer Shipper, 3’’ / 76 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø25 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene

Product #

Wafer Size

Dimensions

Material

NG01WS0102 3” / 76 mm Ø85 x 13 mm Natural translucent PP
  WAFER SHIPPER FEATURES •  For shipping and storage of 3'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 3" (76 mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 6’’ / 150 mm , Natural PP

Price range: $9.60 through $62.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece: 8.6 € 5 pieces: 37 € 10 pieces: 56 € Coin Style Single Wafer Shipper, 6’’ / 150 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø51 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene

Product #

Wafer Size

Dimensions

Material

NG01WS0401 6” / 150 mm Ø160 x 20 mm Natural translucent PP
  WAFER SHIPPER FEATURES •  For shipping and storage of 6'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 6" (150 mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 4’’ / 100 mm , Natural PP

Price range: $9.41 through $58.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece: 8.4 € 5 pieces: 34 € 10 pieces: 52 € Coin Style Single Wafer Shipper, 4’’ / 100 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø51 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene

Product #

Wafer Size

Dimensions

Material

NG01WS0103 4” / 100 mm Ø130 x 15 mm Natural translucent PP
  WAFER SHIPPER FEATURES •  For shipping and storage of 4'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 4" (100 mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 5’’ / 125 mm , Natural PP

Price range: $9.52 through $59.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece: 8.5 € 5 pieces: 35 € 10 pieces: 53 € Coin Style Single Wafer Shipper, 5’’ / 125 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø51 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene
  WAFER SHIPPER FEATURES •  For shipping and storage of 5'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 5" (150 mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.005 (ohm.cm), 2- Polished, Thickness: 200 ± 10 μm

Price range: $54.00 through $1,007.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/49 € 5 pieces/195 € 25 pieces/900 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 2- Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 200 ± 10 μm
Doping Boron
Resistivity (ohm.cm) 0.001 - 0.005
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2- Polished, Thickness: 200 ± 10 μm

Price range: $52.00 through $979.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/47 € 5 pieces/195 € 25 pieces/875 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 2- Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 200 ± 10
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
  Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 0.05 – 0.152 (ohm.cm), 2-Side Polished, Thickness: 365 ± 15 μm

Price range: $70.00 through $996.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 365 ± 15
Doping Phosphor
Resistivity (ohm.cm) 0.05 - 0.152
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0,01-0,02 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $53.00 through $979.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/48 € 5 pieces/195 € 25 pieces/875 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 500 ± 25
Doping Boron
Resistivity (ohm.cm) 0,01-0,02
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.