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2D Materials 3
3D Printer Materials 106
- Aluminum Based Alloy Powder 17
- Cobalt Alloy Powder 4
- Copper Alloy Powder 7
- High Entropy Alloy Powder 6
- High Temperature Alloy Powder 15
- IMC(Intermetallic Compound Powder) 6
- Iron Based Alloy Powder 20
- MIM Powder 0
- Refractory Metal Powder 3
- SPHERICAL NICKEL BASE ALLOY MICRON POWDER 17
- Titanium Based Alloy Powder 11
AAO templates 1
Activated carbon fibers 6
Activated carbons 1
Al 1
ALUMINUM SILICON COPPER SPUTTERING TARGETS 4
- 1 2
- 2 2
ALUMINUM SILICON SPUTTERING TARGETS 9
- 1 2
- 2 2
- 3 2
- 4 2
ANTIMONY SPUTTERING TARGETS 3
- 1 0
- 2 3
ANTIMONY TELLURIDE SPUTTERING TARGETS 9
- 1 2
- 2 3
- 22 0
- 3 2
- 4 2
Artificial Biological Solutions 6
BARIUM FLUORIDE SPUTTERING TARGETS 12
- 1 0
- 2 2
- 3 2
- 4 2
- 5 2
- 6 2
- 8 2
BARIUM SPUTTERING TARGETS 8
- 1 2
- 2 2
- 3 2
- 4 2
BARIUM STRONTIUM TITANATE SPUTTERING TARGETS 10
- 2 1
- 3 2
- 4 2
- 6 2
- 8 2
BARIUM TITANATE SPUTTERING TARGETS 18
- 1 3
- 2 3
- 3 4
- 4 3
- 5 2
- 6 2
- 8 1
BARIUM ZIRCONATE SPUTTERING TARGETS 8
- 1 2
- 2 2
- 3 1
- 4 2
- 6 1
BATTERY EQUIPMENT 174
- 18650 Cylinder Cell Assembly Materials 3
- Battery Lab Machine 7
- Coin Cell Materials 21
- FOILS FOR BATTERIES 24
  - Aluminum Foil 6
  - Copper Foil 2
  - Graphite Foils 7
  - Lithium Foil 1
  - Nickel Foils 2
  - Platinum Foils 6
- LITHIUM BATTERY MATERIALS 58
  - ANODE MATERIALS 23
  - Cathode Materials 23
  - OTHER MATERIALS 3
  - Pouch Cell Materials 9
- Other Battery Lab Equipments 2
- Porous Metal Foam Materials 5
- RAW MATERIALS FOR BATTERY APPLICATION 30
- Separators For Batteries 3
BISMUTH FERRITE (INDIUM) SPUTTERING TARGETS 3
- 1 1
- 2 1
- 3 1
BISMUTH FERRITE SPUTTERING TARGETS 17
- 1 2
- 2 2
- 3 2
- 4 2
- 5 2
- 6 2
- 7 3
- 8 2
BISMUTH OXIDE SPUTTERING TARGETS 9
- 1 2
- 2 3
- 3 3
- 4 1
BISMUTH SPUTTERING TARGETS 9
- 1 2
- 2 2
- 3 2
- 4 3
BISMUTH TELLURIDE SPUTTERING TARGETS 10
- 1 2
- 2 2
- 3 1
- 4 2
- 6 1
- 8 1
Borides 9
BORON CARBIDE SPUTTERING TARGETS 11
- 1 1
- 2 1
- 3 2
- 4 3
- 6 2
- 8 2
BORON NITRIDE SPUTTERING TARGETS 12
- 1 2
- 2 2
- 3 2
- 4 2
- 6 2
- 8 1
BORON SPUTTERING TARGETS 10
- 2 5
- 3 3
- 4 2
CALCIUM MANGANATE SPUTTERING TARGETS 9
- 1 2
- 2 2
- 3 3
- 4 2
Carbides 2
CARBON (GRAPHITE) SPUTTERING TARGETS 7
- 1 1
- 2 2
- 3 2
- 4 2
CARBON (PYROLYTIC GRAPHITE) SPUTTERING TARGETS 11
- 1 2
- 2 3
- 3 3
- 4 3
CARBON NANOTUBES 223
- CARBON NANOTUBE FIBERS 16
  - CARBON NANOTUBE FIBERS 12
  - Composite Wires of Carbon Nanotubes 3
- Carbon Nanotube Nanoribbon 4
- Carbon Nanotube Sponges 8
- CNT DISPERSIONS 20
  - All Carbon Nanotube Dispersions 9
- Double-Walled CNTs 6
  - DWCNT, >65% 2
  - DWCNT, >65%, -COOH 2
  - DWCNT, >65%, -OH 2
- Graphitized Multi-Walled CNTs 16
- Multi-Walled CNTs 33
  - Aligned MWCNT, >96% 2
  - Carbon NanoFibers 0
  - Industrial MWCNTs 0
  - MWCNT, >90%, -COOH 1
  - MWCNT, >92% 4
  - MWCNT, >92%, -COOH 4
  - MWCNT, >92%, -OH 5
  - MWCNT, >95% 1
  - MWCNT, >96% 4
  - MWCNT, >96%, -COOH 6
  - MWCNT, >96%, -Ni 1
  - MWCNT, >96%, -OH 5
  - MWCNT, >99%, -Ni 0
- Short Length Multi-Walled CNTs 0
- Single-Walled CNTs 12
  - SWCNT, >65% 1
  - SWCNT, >65%, -COOH 2
  - SWCNT, >65%, -OH 1
  - SWCNT, >92% 2
  - SWCNT, >92%, -COOH 2
  - SWCNT, >92%, -OH 2
  - SWCNT, >95% 1
  - SWCNT, >96% 1
CARBON SPUTTERING TARGETS 4
- 1 1
- 2 1
- 3 1
Cellulose 3
Cerium 23
CERIUM OXIDE SPUTTERING TARGETS 21
- 1 3
- 2 3
- 3 3
- 4 3
- 5 2
- 6 2
- 7 2
- 8 2
Chitosan 2
Chitosans 15
CHROMIUM OXIDE SPUTTERING TARGETS 11
- 1 2
- 2 3
- 3 3
- 4 3
CHROMIUM SPUTTERING TARGETS 6
- 3 2
- 4 2
- 6 1
- 8 1
COATINGS 3
- Dry Film Lubricants 3
COBALT IRON BORON SPUTTERING TARGETS 6
- 1 0
- 2 3
- 3 2
COBALT SPUTTERING TARGETS 15
- 1 2
- 2 4
- 3 3
- 4 2
- 6 2
- 8 2
Conductive Adhesive Paste 7
COPPER SPUTTERING TARGETS 24
- 1 4
- 2 4
- 3 3
- 4 4
- 5 1
- 6 2
- 7 2
- 8 4
Cosmetic ingredients 17
Cs 3
Cyclodextrins 4
Dendrimers 5
Deposition Materials 109
Dicalcium silicate 0
Discounted Products 12
DISPERSIONS 99
- Borophene Dispersions 1
- Carbon Nanotube Dispersions 38
- GRAPHENE DISPERSIONS 7
- METAL AND OXIDE DISPERSIONS 53
- Silicene Dispersions 1
Dysprosium 23
Erbium 28
Europium 34
Evaporation Materials 71
Foams 2
Fullerene 37
- Fullerene-C60 5
- Fullerene-C70 6
- Polyhydroxylated Fullerene (Fullerenols) 10
Gadolinium 30
GALLIUM Arsenide (GASB) WAFERS 2
Graphdiyne 5
Graphene 93
Graphites 2
Hemicellulose 4
High Purity Inorganic Chemicals 511
High Purity Inorganics 54
High Purity Metal Sputtering Targets 52
Holmium 27
Homogeneous Catalyst 53
Hydrotalcite 2
Inorganic Biomaterials 15
Intermetallics 2
Lab Equipment 14
- Dispersion Equipment 6
  - High Energy Ball Mill 1
  - Homogenizer 2
  - Three Roll Mill 2
- Hydrothermal Synthesis Autoclave Reactors 7
- Roll to Roll PE-CVD 1
Lanthanum 28
LEAD ZIRCONIUM TITANATE 0
LK-99 Raw Materials 3
Lutetium 24
Mesophase 4
Metal Alkoxides 31
Metal beta diketonates ACAC 49
Metal beta diketonates Chiral 10
Metal beta diketonates FOD 15
Metal beta diketonates HFAC 29
Metal beta diketonates TFAC 14
Metal beta diketonates TMHD 36
Metal beta diketonates TTFA 2
microparticles 114
- Elemental micron powder 113
Miscellaneous 11
Molecular sieves 23
MOLYBDENUM SPUTTERING TARGET 11
- 1 2
- 2 2
- 3 2
- 4 2
- 6 2
- 8 1
MXene and MAXene 74
Nanoparticales 0
Nanoparticles 172
- Compounds nanoparticles 34
- Element & Alloys Nanoparticles 53
  - Aluminum Nanoparticles 0
  - Bismuth Nanoparticles 0
  - Boron Nanoparticles 0
  - Carbon Nanoparticles 0
  - Chromium Nanoparticles 0
  - Cobalt Nanoparticles 0
  - Copper Nanoparticles 0
  - Fe-Si Nanoparticles 0
  - Gold Nanoparticles 0
  - Indium Nanoparticles 0
  - Iron Nanoparticles 0
  - Molybdenum Nanoparticles 0
  - Nickel Nanoparticles 0
  - Platinum Nanoparticles 2
  - Selenium Nanoparticles 1
  - Silicon Nanoparticles 6
  - Silver Nanoparticles 16
  - Sulphur Nanoparticles 1
  - Tantalum Nanoparticles 1
  - Tin Nanoparticles 2
  - Titanium Nanoparticles 3
  - Tungsten Nanoparticles 3
  - Zinc Nanoparticles 4
- Magnetic Nanoparticles 0
  - Magnetic Powders of Fe2O3 0
  - Magnetic Powders of Fe3O4 0
- multi-elements oxide nanoparticles 17
- Nanocellulose 8
- Single Metal Oxide Nanoparticles 54
Nanoparticles & Nanopowders 466
- Metal and Non-metal Elements 94
- Oxides and Compounds 106
Nanotubes & Graphenes 69
Nitrides 6
Organic 3
Organic salts 3
PAMAM 0
Polyamino acids 3
polymers 17
Potassium 0
PZT SPUTTERING TARGETS 0
Quantum Dots 61
- Cadmium Selenide Quantum Dots (CdSe/ZnS) 13
- Carbon Quantum Dots (CQD) 17
- Graphene Quantum Dots (GQD) 1
- Indium Phosphide Quantum Dots (InP/ZnS QD) 11
- Lead Sulfide Quantum Dots (PbS QD) 8
- Perovskite Quantum Dots 3
- QLED Quantum Dots 6
- Zinc Selenide Quantum Dots (ZnSe/ZnS QD) 2
Rare Earth Materials 187
- RARE EARTH COMPOUND POWDER 7
- RARE EARTH ELEMENT POWDER 16
  - Cerium (Ce) Powder 1
  - Dysprosium (Dy) Powder 1
  - Erbium (Er) Powder 1
  - EUROPIUM (EU) POWDER 1
  - Gadolinium (Gd) Powder 1
  - Holmium (Ho) Powder 1
  - Lanthanum (La) Powder 1
  - Neodymium (Nd) Powder 1
  - Praseodymium (Pr) Powder 1
  - Samarium (Sm) Powder 1
  - Scandium (Sc) Powder 2
  - Terbium (Tb) Powder 1
  - Thulium (Tm) Powder 1
  - Yttrium (Y) Powder 2
- RARE EARTH OXIDE POWDER 29
- Rare Earth Sputtering Targets 115
Screen Printed Electrode 2
SHAPE MEMORY MATERIALS 23
- SHAPE MEMORY ALLOYS 8
  - Shape Memory Alloy Sheets 3
  - SHAPE MEMORY ALLOY WIRES 5
- SHAPE MEMORY POLYMERS 15
Silica aerogel 2
Silicon Wafers & Semiconductor Wafers 275
- 2" 8
- 3" 6
- 4" 16
- 6" 6
- 8" 3
- Borosilicate Wafer 11
  - 2" 0
  - 3" 2
  - 4" 5
  - 6" 3
  - 8" 1
- CZ-Si Wafer 23
  - 2" 7
  - 3" 4
  - 4" 7
  - 6" 3
  - 8" 2
- Fused Silica Wafers 7
  - 2" 1
  - 4" 4
  - 6" 2
- FZ-Si Wafers 10
  - 2" 2
  - 3" 1
  - 4" 7
- GAAS WAFER 14
  - 2" 8
  - 4" 6
- GALLIUM ANTIMONIDE (GASB) WAFERS 20
  - 2" 8
  - 3" 8
  - 4" 4
- Gallium Arsenide (GaAs) Wafers 6
  - 2" 0
  - 4" 0
  - 6" 0
- INDIUM ARSENIDE (INAS) WAFERS 2
  - 2" 1
  - 3" 1
  - 4" 0
- INDIUM PHOSPHIDE (INP) WAFERS 29
  - 2" 9
  - 3" 12
  - 4" 8
- Quartz Wafer 9
  - 2" 1
  - 4" 8
- SI + SINX WAFERS 7
  - 3" 2
  - 4" 5
- SI + SIO2 WAFERS 24
  - 2" 3
  - 3" 5
  - 4" 14
  - 6" 2
- Si+Si3N4 Wafer 5
  - 2" 0
  - 3" 1
  - 4" 4
  - 6" 0
- SILICON CARBIDE WAFER ( SIC-4H ) - 4H 13
  - 2" 5
  - 3" 4
  - 4" 4
- SILICON CARBIDE WAFER ( SIC-6H ) - 6H 2
  - 2" 2
- SILICON ON INSULATOR (SOI) WAFERS 9
  - 4" 2
  - 6" 4
  - 8" 3
- Wafer Shippers 5
Silk extracts 1
Sodium phytate 0
Spherical materials 14
Sputtering Targets 2432
- Sputtering Targets Names A - C 298
  - Aluminum Nitride Sputtering Targets 22
    - 1" 6
    - 2" 6
    - 3" 6
    - 4" 4
  - Aluminum Oxide Sputtering Targets 24
    - 1" 4
    - 2" 5
    - 3" 4
    - 4" 4
    - 6" 4
    - 8" 3
  - Aluminum Sputtering Targets 25
    - 1" 4
    - 2" 4
    - 3" 4
    - 4" 4
    - 5" 1
    - 6" 4
    - 8" 4
- SPUTTERING TARGETS NAMES D - M 337
  - ERBIUM OXIDE SPUTTERING TARGETS 8
    - 1 2
    - 2 2
    - 3 2
    - 4 2
  - Erbium Oxide Sputtering Targets 7
  - GERMANIUM SPUTTERING TARGETS 11
    - 1 1
    - 2 2
    - 3 4
    - 4 2
  - INDIUM OXIDE SPUTTERING TARGETS 9
    - 1 2
    - 2 2
    - 3 2
    - 4 2
  - INDIUM SPUTTERING TARGETS 4
    - 1 4
  - INDIUM TIN OXIDE (ITO) SPUTTERING TARGETS 11
    - 1 3
    - 2 1
    - 3 2
    - 4 2
    - 6 2
    - 8 1
  - INDIUM ZINC OXIDE SPUTTERING TARGETS 9
    - 1 2
    - 2 3
    - 3 2
    - 4 2
  - IRON OXIDE SPUTTERING TARGETS 16
    - 1 3
    - 2 3
    - 3 3
    - 4 2
    - 5 1
    - 6 2
    - 7 2
  - IRON SPUTTERING TARGETS 14
    - 1 2
    - 2 6
    - 3 3
    - 4 3
  - LANTHANUM ALUMINATE (INDIUM) SPUTTERING TARGETS 2
    - 1 1
    - 2 1
  - LANTHANUM CALCIUM MANGANATE (LA0.7CA0.3MNO3) 16
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 7 2
    - 8 2
  - LANTHANUM MANGANATE SPUTTERING TARGETS 17
    - 1 3
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 7 2
    - 8 2
  - Lanthanum Nickel Oxide Sputtering Targets 18
  - Lanthanum Strontium Manganate (La0.9Sr0.1MnO3) 6
  - Lanthanum Strontium Manganate(La0.7Sr0.3MnO3) 9
  - Lanthanum Titanate Sputtering Targets 16
  - LEAD ZIRCONIUM TITANATE, PZT SPUTTERING TARGETS 16
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 7 2
    - 8 2
  - LITHIUM COBALT OXIDE SPUTTERING TARGETS 10
    - 1 1
    - 2 3
    - 3 3
    - 4 3
  - LITHIUM NICKEL COBALT OXIDE (LINI(1-X)COXO2) 2
    - 2 2
  - LITHIUM NIOBATE SPUTTERING TARGETS 7
    - 1 1
    - 2 2
    - 3 2
    - 4 2
  - LITHIUM PHOSPHATE SPUTTERING TARGETS 18
    - 1 3
    - 2 3
    - 3 2
    - 4 3
    - 5 1
    - 6 2
    - 7 2
    - 8 1
  - LITHIUM TITANATE SPUTTERING TARGETS 8
    - 1 2
    - 2 2
    - 3 3
    - 4 1
  - MAGNESIUM FLUORIDE SPUTTERING TARGETS 10
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 6 1
    - 8 1
  - MAGNESIUM OXIDE SPUTTERING TARGETS 22
    - 1 3
    - 2 5
    - 3 2
    - 4 3
    - 5 2
    - 6 2
    - 7 2
    - 8 2
  - MAGNESIUM SPUTTERING TARGETS 22
    - 1 4
    - 2 4
    - 3 4
    - 4 4
    - 5 1
    - 6 2
    - 8 2
  - MANGANESE SPUTTERING TARGETS 11
    - 1 3
    - 2 2
    - 3 3
    - 4 2
    - 6 1
  - MOLYBDENUM DISILICIDE SPUTTERING TARGETS 9
    - 1 2
    - 2 2
    - 3 2
    - 4 3
  - MOLYBDENUM DISULFIDE SPUTTERING TARGETS 15
    - 1 3
    - 2 3
    - 3 3
    - 4 2
    - 6 2
    - 8 1
  - MOLYBDENUM OXIDE SPUTTERING TARGETS 9
    - 1 2
    - 2 2
    - 3 3
    - 4 2
- SPUTTERING TARGETS NAMES N - S 244
  - 4. 0
  - NICKEL CHROMIUM SPUTTERING TARGETS 13
    - 1 2
    - 2 2
    - 3 4
    - 4 2
    - 6 2
  - NICKEL IRON SPUTTERING TARGETS 8
    - 1 2
    - 2 3
    - 3 2
    - 4 1
  - NICKEL OXIDE SPUTTERING TARGETS 11
    - 1 4
    - 2 7
    - 3 0
  - NICKEL SPUTTERING TARGETS 34
    - 1 3
    - 2 6
    - 3 6
    - 4 6
    - 5 1
    - 6 6
    - 8 6
  - NICKEL VANADIUM SPUTTERING TARGETS 10
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 6 1
    - 8 1
  - NIOBIUM OXIDE SPUTTERING TARGETS 11
    - 1 2
    - 2 3
    - 3 2
    - 4 3
    - 8 1
  - NIOBIUM SPUTTERING TARGETS 8
    - 1 2
    - 2 2
    - 3 2
    - 4 2
  - PERMALLOY SPUTTERING TARGETS 6
    - 2 2
    - 3 2
    - 4 2
  - Praseodymium Calcium Manganate Sputtering Targets 19
    - 1 2
    - 2 4
    - 3 2
    - 4 2
  - PRASEODYMIUM SPUTTERING TARGETS 12
    - 1 2
    - 2 2
    - 3 2
    - 4 3
    - 6 2
    - 8 2
  - Purity: 99.9% 0
  - SELENIUM SPUTTERING TARGETS 9
    - 1 2
    - 2 3
    - 3 2
    - 4 2
  - SILICON (SI (N-TYPE)) SPUTTERING TARGET 13
    - 1 1
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 8 2
  - SILICON (SI (P-TYPE)) SPUTTERING TARGETS 16
    - 1 3
    - 2 2
    - 3 3
    - 4 3
    - 6 2
    - 8 2
  - SILICON (SI) (UNDOPED) SPUTTERING TARGETS 7
    - 1 2
    - 2 2
    - 3 2
    - 4 1
  - SILICON CARBIDE SPUTTERING TARGETS 12
    - 1 2
    - 2 3
    - 3 3
    - 4 3
  - SILICON DIOXIDE (FUSED QUARTZ) SPUTTERING TARGETS 16
    - 1 2
    - 2 3
    - 3 3
    - 4 3
    - 5 1
    - 6 2
    - 8 1
  - SILICON NITRIDE SPUTTERING TARGETS 12
    - 1 4
    - 2 5
    - 3 3
  - SILVER SPUTTERING TARGETS 11
    - 1 2
    - 2 3
    - 3 2
    - 4 2
    - 6 1
    - 8 1
  - Size: 1'' 0
  - STRONTIUM TITANATE SPUTTERING TARGETS 17
    - 1 3
    - 2 3
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 7 2
    - 8 1
  - Thickness: 0.250'' 0
- SPUTTERING TARGETS NAMES T - Z 363
  - TANTALUM OXIDE SPUTTERING TARGETS 10
    - 2 4
    - 3 4
    - 4 1
  - TANTALUM SPUTTERING TARGETS 12
    - 1 2
    - 2 3
    - 3 2
    - 4 2
    - 6 1
    - 8 2
  - TIN OXIDE SPUTTERING TARGETS 11
    - 1 2
    - 2 3
    - 3 3
    - 4 3
  - TIN SPUTTERING TARGETS 17
    - 1 4
    - 2 4
    - 3 3
    - 4 2
    - 6 2
    - 8 2
  - TITANIUM BORIDE SPUTTERING TARGETS 8
    - 1 1
    - 2 3
    - 3 2
    - 4 2
  - TITANIUM CARBIDE SPUTTERING TARGETS 7
    - 1 1
    - 2 2
    - 3 2
    - 4 2
  - TITANIUM DIOXIDE SPUTTERING TARGETS 29
    - 1 6
    - 2 7
    - 3 6
    - 4 6
    - 6 2
    - 8 1
  - TITANIUM NITRIDE SPUTTERING TARGETS 11
    - 1 2
    - 2 4
    - 3 2
    - 4 3
  - TUNGSTEN DISULFIDE SPUTTERING TARGETS 9
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 1
    - 8 1
  - TUNGSTEN OXIDE SPUTTERING TARGETS 11
    - 1 2
    - 2 3
    - 3 3
    - 4 3
  - TUNGSTEN SPUTTERING TARGETS 13
    - 1 2
    - 2 3
    - 3 3
    - 4 2
    - 6 1
    - 8 2
  - TUNGSTEN TITANIUM SPUTTERING TARGETS 12
    - 1 3
    - 2 2
    - 3 2
    - 4 2
    - 6 2
    - 8 1
  - VANADIUM OXIDE SPUTTERING TARGETS 14
    - 1 1
    - 2 4
    - 3 3
    - 4 3
    - 6 1
    - 8 1
  - VANADIUM SPUTTERING TARGETS 9
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 8 1
  - YTTERBIUM OXIDE SPUTTERING TARGETS 7
    - 1 2
    - 2 3
    - 3 2
  - YTTRIUM FERRITE SPUTTERING TARGETS 6
    - 1 2
    - 2 3
    - 3 1
  - YTTRIUM SPUTTERING TARGETS 8
    - 1 2
    - 2 2
    - 3 2
    - 4 2
  - ZINC OXIDE SPUTTERING TARGETS 17
    - 1 5
    - 2 6
    - 3 5
    - 4 1
  - ZINC OXIDE WITH ALUMINA SPUTTERING TARGETS 14
    - 1 1
    - 2 4
    - 3 4
    - 4 3
    - 6 1
    - 8 1
  - ZINC SPUTTERING TARGETS 20
    - 1 4
    - 2 6
    - 3 4
    - 4 4
    - 6 1
    - 8 1
  - ZINC SULFIDE SPUTTERING TARGETS 10
    - 1 2
    - 2 3
    - 3 3
    - 4 2
Sulfides 2
Super absorbent polymers 7
Tea extracts 1
Titanate 2
Tricalcium silicate 3
Whiskers 9

Gallium Arsenide (GaAs) Wafer, Size: 4”, Thickness: 300± 25 μm, Double Side Polished, EPI-ready

GAAS WAFER, 4", Silicon Wafers & Semiconductor Wafers

$219.00 – $4,418.00Price range: $219.00 through $4,418.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/198 € 5 pieces/935 € 25 pieces/3980 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	4”
Thickness (μm)	300± 25
Polished	Double Side
Dopant	Undoped
Orientation	100
Resistivity	1 E8
Mobility	4500
EPD	≤5000
Growth method	VGF
OF Length	32.5±1
IF Length	18±1

Applications:

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs) has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

GAAS WAFER, 4", Silicon Wafers & Semiconductor Wafers

$175.00 – $3,319.00Price range: $175.00 through $3,319.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/158 € 5 pieces/749 € 25 pieces/2990 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 350±25 μm, Single Side Polished

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	350± 25
Polished	Single Side
Dopant	Silicon (N Type)
Orientation	(100)15 deg off toward ＜111＞A±0.5
Resistivity	(1.2—9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	32±1
IF Length	18±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 625±25 μm, Single Side Polished, EPI-ready

GAAS WAFER, 4", Silicon Wafers & Semiconductor Wafers

$175.00 – $3,319.00Price range: $175.00 through $3,319.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/158 € 5 pieces/749 € 25 pieces/2990 € Please ask for stock status before placing an order on wafer products Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 625±25 μm, Single Side Polished

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	4”
Thickness (μm)	625± 25
Polished	Single Side
Dopant	Silicon (N Type)
Orientation	(100)
Resistivity	(1.2—9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	32±1
IF Length	18±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 350± 25 μm, Single Side Polished, EPI-ready, Mobility: 1000-3000

GAAS WAFER, 4", Silicon Wafers & Semiconductor Wafers

$175.00 – $3,319.00Price range: $175.00 through $3,319.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/158 € 5 pieces/749 € 25 pieces/2990 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 350± 25 μm, Mobility: 1000-3000

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	4”
Thickness (μm)	350± 25
Polished	Single Side
Dopant	Silicon (N Type)
Orientation	(100)2deg off toward ＜011＞±0.5
Resistivity	(1.2—9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	32±1
IF Length	18±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 600±25 μm, Double Side Polished, EPI-ready

GAAS WAFER, 4", Silicon Wafers & Semiconductor Wafers

$186.00 – $4,385.00Price range: $186.00 through $4,385.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/168€ 5 pieces/830€ 25 pieces/3950€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 4”, Double Side Polished, Thickness: 600± 25 μm, EPI-ready Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	4”
Thickness (μm)	600± 25
Polished	Double Side
Dopant	Undoped
Orientation	(100)
Resistivity	1 E8
Mobility	4500
EPD	≤5000
Growth method	VGF
OF Length	32,5±1
IF Length	18±1

Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs) has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 640±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N-type)

GAAS WAFER, 4", Silicon Wafers & Semiconductor Wafers

$153.00 – $3,191.00Price range: $153.00 through $3,191.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/138€ 5 pieces/640€ 25 pieces/2875€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 4”, Single Side Polished, Thickness: 640± 25 μm, EPI-ready, Dopant: Silicon (N-type) Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	4”
Thickness (μm)	640± 25
Polished	Single Side
Dopant	Silicon (N-Type)
Orientation	(100) 2 deg off toward<111>A±0.5
Resistivity	(1.2-9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	32±1
IF Length	18±1

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

GAAS WAFER, 2", Silicon Wafers & Semiconductor Wafers

$149.00 – $2,875.00Price range: $149.00 through $2,875.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/135 € 5 pieces/635 € 25 pieces/2590 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Single Side Polished

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	350± 25
Polished	Single Side
Dopant	Silicon ( N type )
Orientation	(100)15 deg off toward ＜111＞A±0.5
Resistivity	(1.2—9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	17±1
IF Length	7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, EPI-ready

GAAS WAFER, 2", Silicon Wafers & Semiconductor Wafers

$175.00 – $3,319.00Price range: $175.00 through $3,319.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/158 € 5 pieces/749 € 25 pieces/2990 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	350± 25
Polished	Single Side
Dopant	Silicon (N type)
Orientation	(100)
Resistivity	(1.2—9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	17±1
IF Length	7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready, Mobility: 1000-3000

Silicon Wafers & Semiconductor Wafers, GAAS WAFER, 2"

$175.00 – $3,319.00Price range: $175.00 through $3,319.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/158 € 5 pieces/749 € 25 pieces/2990 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Mobility: 1000-3000

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	350± 25
Polished	Single Side
Dopant	Silicon (N type)
Orientation	(100)2 deg off toward ＜111＞A±0.5
Resistivity	(1.2—9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	17±1
IF Length	7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready

GAAS WAFER, 2", Silicon Wafers & Semiconductor Wafers

$175.00 – $3,319.00Price range: $175.00 through $3,319.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/158 € 5 pieces/749 € 25 pieces/2990 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Double Side Polished

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	350± 25
Polished	Double Side
Dopant	None
Orientation	(100)
Resistivity	1 E8
Mobility	2000
EPD	≤5000
Growth method	VGF
OF Length	17±1
IF Length	7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready, Dopant: Zinc (P Type)

GAAS WAFER, 2", Silicon Wafers & Semiconductor Wafers

$175.00 – $3,319.00Price range: $175.00 through $3,319.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/158 € 5 pieces/749 € 25 pieces/2990 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Dopant: Zinc (P Type)

Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	350± 25
Polished	Single Side
Dopant	Zinc (P Type)
Orientation	(100)15 deg off toward＜111A＞
Resistivity	(1.2—9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	17±1
IF Length	7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 400±25 μm, Double Side Polished, EPI-ready

GAAS WAFER, 2", Silicon Wafers & Semiconductor Wafers

$142.00 – $2,192.00Price range: $142.00 through $2,192.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/128€ 5 pieces/490€ 25 pieces/1975€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 400± 25 μm, EPI-ready Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	400± 25
Polished	Double Side
Dopant	Undoped
Orientation	100
Resistivity	1 E8
Mobility	2000
EPD	≤5000
Growth method	VGF
OF Length	17±1
IF Length	7±1

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready, Dopant: Zinc (P Type)

GAAS WAFER, 2", Silicon Wafers & Semiconductor Wafers

$139.00 – $2,081.00Price range: $139.00 through $2,081.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/126€ 5 pieces/480€ 25 pieces/1875€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 350± 25 μm, EPI-ready, Dopant: Zinc (P Type) Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	350± 25
Polished	Double Side
Dopant	Zinc (P Type)
Orientation	(100) = 0 deg off toward <111A>
Resistivity	( 1.2-9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	17±1
IF Length	7±1

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 450±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N Type)

GAAS WAFER, 2", Silicon Wafers & Semiconductor Wafers

$126.00 – $1,859.00Price range: $126.00 through $1,859.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/114€ 5 pieces/445€ 25 pieces/1675€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Single Side Polished, Thickness: 450± 25 μm, EPI-ready, Dopant: Silicon (N Type) Technical Properties:

Quality	GaAs
Materials	GaAs
Size (inch)	2”
Thickness (μm)	450± 25
Polished	Single Side
Dopant	Silicon (N Type)
Orientation	(100) =2 deg off toward<111A>± 0.5
Resistivity	( 1.2-9.9) E-3
Mobility	1000-3000
EPD	≤3000
Growth method	VGF
OF Length	17±1
IF Length	7±1

Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high temperature thermometers.

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Gallium Arsenide (GaAs) Wafer

Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready

Technical Properties:

Applications:

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 350±25 μm, Single Side Polished

Technical Properties:

Fields of Application for Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 625±25 μm, Single Side Polished

Technical Properties:

Fields of Application for Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs) Wafer

Size: 4”, Thickness: 350± 25 μm, Mobility: 1000-3000

Technical Properties:

Fields of Application for Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Single Side Polished

Technical Properties:

Fields of Application for Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Fields of Application for Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Mobility: 1000-3000

Technical Properties:

Fields of Application for Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Double Side Polished

Technical Properties:

Fields of Application for Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Dopant: Zinc (P Type)

Technical Properties:

Fields of Application for Gallium Arsenide (GaAs)

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