Nickel Chromium (Ni-Cr) Alloy Nanopowder/Nanoparticles, Purity: 99.95%, Size: < 90 nm

Price range: $97.00 through $3,309.00
Select options This product has multiple variants. The options may be chosen on the product page

Nickel Chromium (Ni-Cr) Alloy Nanopowder/Nanoparticles

Purity: 99.95%, Size: < 90 nm

Technical Properties:

Alloy Ratio (Ni-Cr) 80-20
Average Particle Size (nm) < 90 nm

Properties, Storage and Cautions:

Ni-Cr alloy nanoparticles are highly reactive, therefore it should be handled with care and rapid moves, vibrations should be avoided. The powder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, the powder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Applications:

Ni-Cr alloy is generally used in electrical heaters, explosives, ignition systems, internal support for clay sculptures etc…

Nickel Chromium (Ni-Cr) Alloy Nanopowder/Nanoparticles, Purity: 99.95%, Size: < 90 nm

Price range: $97.00 through $3,309.00
Select options This product has multiple variants. The options may be chosen on the product page

Nickel Chromium (Ni-Cr) Alloy Nanopowder/Nanoparticles

Purity: 99.95%, Size: < 90 nm

Technical Properties:

Alloy Ratio (Ni-Cr) 80-20
Average Particle Size (nm) < 90 nm

Properties, Storage and Cautions:

Ni-Cr alloy nanoparticles are highly reactive, therefore it should be handled with care and rapid moves, vibrations should be avoided. The powder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, the powder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Lead Sulfide Quantum Dots (PbS QD) 850 nm

Price range: $825.00 through $3,299.00
Select options This product has multiple variants. The options may be chosen on the product page

APPLICATION

Due to their distinct characteristics, PbS QDs are used in:
  • Photodetectors,
  • Light emmiting diodes (LEDs),
  • Transistors,
  • Photovoltaics,
  • Solar cells,
  • Electrocatalysis.

H-ZSM-22 (253853)

Price range: $350.00 through $3,265.00
Select options This product has multiple variants. The options may be chosen on the product page
H-ZSM-22 (253853)

Pore Structure  TON Pore Size(nm)  0.55 - 0.80  SiO2/Al2O3  40 - 80, 80 - 150, 150 - 300 Relative Crystallinity(%)   >= 95 Na2O weight(%)  <= 0.1 Loss on Ignition(%)  <= 5 

 
Product Codes- NCZ-2726K

Manganese (Mn) Micron Powder, Purity: 99.99 %, Size: 100 mesh

Price range: $69.00 through $3,246.00
Select options This product has multiple variants. The options may be chosen on the product page
1 gram/62 € 5 grams/260 € 25 grams/865 € 100 grams/2880 €
Please contact us for quotes on larger quantities !!!

Manganese (Mn) Micron Powder

Purity: 99.99 %, Size: 100 mesh

Technical Properties:

PURITY

99.99 %

PARTICLE SIZE

100 Mesh

CAS

7439-96-5

MELTING POINT

1245 °C

BOILING POINT

2150 °C

CRYSTAL STRUCTURE

Cubic

DENSITY

7.43 g/cm³

COEFF. OF EXPANSION @ 20ºC

22 x 10⁻⁶

MOHS HARDNESS @ 20ºC

5

FORM  

Powder

APPLICATIONS

Alloys Ceramics Chemical reactions

                                    

Lead Sulfide Quantum Dots (PbS QD) 950 nm

Price range: $820.00 through $3,245.00
Select options This product has multiple variants. The options may be chosen on the product page

APPLICATION

Due to their distinct characteristics, PbS QDs are used in:
  • Photodetectors,
  • Light emmiting diodes (LEDs),
  • Transistors,
  • Photovoltaics,
  • Solar cells,
  • Electrocatalysis.

Lutetium (III) Oxide (Lu2O3) 99.995% 4N5 Powder

Price range: $425.00 through $3,236.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Lutetium (III) Oxide (Lu2O3) 99.995% 4N5 Powder
CAS No. 12032-20-1
Appearance White to off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100nm (Size Can be customized),  Ask for other available size range.
Ingredient Lu2O3
Molecular Weight 397.93 g/mol
Melting Point 2,490 °C
Boiling Point N/A
Density 9.42 g/cm³
Product Codes NCZ-448I
 

Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 640±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N-type)

Price range: $153.00 through $3,191.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/138€ 5 pieces/640€ 25 pieces/2875€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 4”, Single Side Polished, Thickness: 640± 25 μm, EPI-ready, Dopant: Silicon (N-type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  4”
Thickness (μm)  640± 25
Polished  Single Side
Dopant  Silicon (N-Type)
Orientation  (100) 2 deg off toward<111>A±0.5
Resistivity   (1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  32±1
IF Length  18±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Lead Sulfide Quantum Dots (PbS QD) 1050 nm

Price range: $810.00 through $3,179.00
Select options This product has multiple variants. The options may be chosen on the product page

APPLICATION

Due to their distinct characteristics, PbS QDs are used in:
  • Photodetectors,
  • Light emmiting diodes (LEDs),
  • Transistors,
  • Photovoltaics,
  • Solar cells,
  • Electrocatalysis.

Aluminum Fluoride (AlF3) 99.999% Optical Grade

Price range: $205.00 through $3,175.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Aluminum Fluoride (AlF3) 99.999% Optical Grade
CAS No. 7784-18-1
Appearance White, odorless solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20–80nm (Size Can be customized),  Ask for other available size range.
Ingredient AlF3
Molecular Weight 83.98 g/mol
Melting Point 1,290 °C
Boiling Point N/A
Density 3.10 g/cm³
Product Codes NCZ-279I

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

Price range: $672.00 through $3,168.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

Price range: $672.00 through $3,168.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25

Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

Price range: $712.00 through $3,153.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-6H) – 6H Size: 2”, Thickness: 350 μm, Usable Area: 95% Technical Properties: Quality  Dummy Grade Size (inch)  2”

Lead Sulfide Quantum Dots (PbS QD) 1150 nm

Price range: $805.00 through $3,115.00
Select options This product has multiple variants. The options may be chosen on the product page

APPLICATION

Due to their distinct characteristics, PbS QDs are used in:
  • Photodetectors,
  • Light emmiting diodes (LEDs),
  • Transistors,
  • Photovoltaics,
  • Solar cells,
  • Electrocatalysis.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $162.00 through $3,108.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Single Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)

Short Length Double Walled Carbon Nanotubes, Purity: > 65%

Price range: $220.00 through $3,101.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Double Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Carbon Nanotube Sponges, Size: 50 mm x 20 mm, Thickness: 1-2 mm

Price range: $596.00 through $3,101.00
Select options This product has multiple variants. The options may be chosen on the product page
Carbon Nanotube Sponges, Size: 50 mm x 20 mm, Thickness: 1-2mm The carbon nanotube sponge structure is uniform and they possess good mechanical strength, good flexibility, high porosity and low density. They can be used as a purifying agent in order to absorb pollutants. These pollutants can be fertilizers, pesticides or pharmaceuticals found in water, energy storage materials, catalyst carriers or in high-efficiency composite materials.

High Purity Zinc Fluoride (ZnF2) Powder 99.999% 5N

Price range: $843.00 through $3,065.00
Select options This product has multiple variants. The options may be chosen on the product page
Product High Purity Zinc Fluoride (ZnF2) Powder 99.999% 5N
CAS No. 7783-49-5
Appearance White crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient ZnF2
Molecular Weight 103.39 g/mol
Melting Point N/A
Boiling Point N/A
Density 4.95 g/cm³
Product Codes NCZ-415I

Lead Sulfide Quantum Dots (PbS QD) 1250 nm

Price range: $799.00 through $3,050.00
Select options This product has multiple variants. The options may be chosen on the product page

APPLICATION

Due to their distinct characteristics, PbS QDs are used in:
  • Photodetectors,
  • Light emmiting diodes (LEDs),
  • Transistors,
  • Photovoltaics,
  • Solar cells,
  • Electrocatalysis.

Scandium(III) oxide (Sc2O3) 99.99% 4N Powder

Price range: $315.00 through $3,010.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Scandium(III) oxide (Sc2O3) 99.99% 4N Powder
CAS No. 12060-08-1
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 5µm (Size Can be customized),  Ask for other available size range.
Ingredient Sc2O3
Molecular Weight 137.91 g/mol
Melting Point 2485°C
Boiling Point N/A
Density 3.86 g/cm³
Product Codes NCZ-511I
 

Lead Sulfide Quantum Dots (PbS QD) 1350 nm

Price range: $795.00 through $3,010.00
Select options This product has multiple variants. The options may be chosen on the product page

APPLICATION

Due to their distinct characteristics, PbS QDs are used in:
  • Photodetectors,
  • Light emmiting diodes (LEDs),
  • Transistors,
  • Photovoltaics,
  • Solar cells,
  • Electrocatalysis.

Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 1000 ppm Dry powder

Price range: $274.00 through $3,000.00
Select options This product has multiple variants. The options may be chosen on the product page
25 ml/245 € 100 ml/586 € 500 ml/1740 € 1000 ml/2680 € Please contact us for quotes on larger quantities !!!  

Polyhydroxylated Fullerene (Fullerenols)/ C60

(-OH) Functionalized, Dispersed in Water, 1000 ppm Dry powder

The starting material is >98% purity C60 fullerenes. C60 bearing over 40 hydroxyl groups that have higher water solubility (>50 mg/mL). These exist as monodisperse nanoparticles in water, and have a valiant polishing effect. They exhibit superior antioxidant and anti-inflammatory properties.

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.

Lead Sulfide Quantum Dots (PbS QD) 1450 nm

Price range: $790.00 through $2,985.00
Select options This product has multiple variants. The options may be chosen on the product page

APPLICATION

Due to their distinct characteristics, PbS QDs are used in:
  • Photodetectors,
  • Light emmiting diodes (LEDs),
  • Transistors,
  • Photovoltaics,
  • Solar cells,
  • Electrocatalysis.

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

Price range: $654.00 through $2,982.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 100% Technical Properties: Quality  Mechanical Grade Size (inch)  4”

Silver Tin (Ag-Sn) Alloy Nanopowder/Nanoparticles, Purity: 99.995%, Size : < 110 nm

Price range: $72.64 through $2,976.05
Select options This product has multiple variants. The options may be chosen on the product page
Silver Tin (Ag-Sn) Alloy Nanopowder/Nanoparticles Purity: 99.995%, Size : < 110 nm Technical Properties: Alloy Ratio (Ni-Cr) 10,0-90,0 Average Particle

Silver Tin (Ag-Sn) Alloy Nanopowder/Nanoparticles, Purity: 99.995%, Size : < 110 nm

Price range: $72.64 through $2,976.05
Select options This product has multiple variants. The options may be chosen on the product page
Silver Tin (Ag-Sn) Alloy Nanopowder/Nanoparticles Purity: 99.995%, Size : < 110 nm Technical Properties: Alloy Ratio (Ni-Cr) 10,0-90,0 Average Particle

Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 500 ppm Dry powder

Price range: $244.00 through $2,975.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.

Lead Sulfide Quantum Dots (PbS QD) 1550 nm

Price range: $775.00 through $2,975.00
Select options This product has multiple variants. The options may be chosen on the product page

APPLICATION

Due to their distinct characteristics, PbS QDs are used in:
  • Photodetectors,
  • Light emmiting diodes (LEDs),
  • Transistors,
  • Photovoltaics,
  • Solar cells,
  • Electrocatalysis.

Silver Tin (Ag-Sn) Alloy Nanopowder/Nanoparticles, Purity: 99.995%, Size : < 110 nm

Price range: $72.00 through $2,975.00
Select options This product has multiple variants. The options may be chosen on the product page
1 gram/64 € 5 grams/311 € 25 grams/756 € 100 grams/2622 € Please contact us for quotes on larger quantities !!! 

Silver Tin (Ag-Sn) Alloy Nanopowder/Nanoparticles

Purity: 99.995%, Size : < 110 nm

Technical Properties:

Alloy Ratio (Ni-Cr) 10,0-90,0
Average Particle Size (nm) < 110 nm

Properties, Storage and Cautions:

Ag-Sn alloy nanoparticles are highly reactive, therefore it should be handled with care and rapid moves, vibrations should be avoided. The powder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, the powder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Silver Tin (Ag-Sn) Alloy Nanopowder/Nanoparticles, Purity: 99.995%, Size : < 110 nm

Price range: $72.00 through $2,967.00
Select options This product has multiple variants. The options may be chosen on the product page

Silver Tin (Ag-Sn) Alloy Nanopowder/Nanoparticles

Purity: 99.995%, Size : < 110 nm

Technical Properties:

Alloy Ratio (Ni-Cr) 10,0-90,0
Average Particle Size (nm) < 110 nm

Properties, Storage and Cautions:

Ag-Sn alloy nanoparticles are highly reactive, therefore it should be handled with care and rapid moves, vibrations should be avoided. The powder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, the powder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.  

Carbon Nanotube Fibres, Fiber Diameter: 5-12 µm, Tensile Strength 1200-1500 MPa, Electrical conductivity 5×10^4~7×10^4 S/m

Price range: $674.00 through $2,933.00
Select options This product has multiple variants. The options may be chosen on the product page
Carbon Nanotube Fibres, Fiber Diameter: 5-12 µm, Tensile Strength 1200-1500 MPa, Electrical conductivity 5×104~7×104 S/m Carbon nanotube fibers have moderate to high strengths. Also, they possess good electrical conductivity and very low density. Due to these properties, carbon nanotube fibers can be integrated into fabrics and composites. Their area of usage involves their use as stand-alone or embedded sensors. Moreover, their high strength, stiffness, thermal and electrical conductivity enable their use as functional reinforcements in composite materials, in active heating/cooling systems, electrical conductivity/EMI shielding mechanisms such as CNT/epoxy composites and in atmospheric anti-threat detection in UAVs.

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

Price range: $621.00 through $2,930.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/560  5 pieces/2640                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 100

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

Price range: $621.00 through $2,930.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/560  5 pieces/2640                            Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 111

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
 

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, Testing Grade

Price range: $623.00 through $2,911.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565  5 pieces/2640                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

(-COOH) Functionalized Short Length Double Walled Carbon Nanotubes, Purity: > 65%

Price range: $186.00 through $2,876.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Double Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $149.00 through $2,875.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/135  5 pieces/635  25 pieces/2590  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Single Side Polished

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Silicon ( N type )
Orientation  (100)15 deg off toward <111>A±0.5
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Hafnium (Hf) Sputtering Target

Price range: $440.00 through $2,850.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Hafnium (Hf) Sputtering Target

CAS No.

7440-58-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 178.49 g/mol

Melting Point

2,233 °C

Boiling Point

4,603 °C

Density

13.31 g/cm³

Product Codes

NCZ-1291K

(-OH) Functionalized Short Single Walled Carbon Nanotubes, Purity: >92%

Price range: $193.00 through $2,809.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Single Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Single Walled Carbon Nanotubes, Purity: > 96%, Dia: 1.0 nm

Price range: $220.00 through $2,807.00
Select options This product has multiple variants. The options may be chosen on the product page

Single Walled Carbon Nanotubes

Purity: > 96%, Dia: 1.0 nm

Single walled carbon nanotubes (SWCNTs, SWNTs) comprise of one-atom-thick sheets of graphene that rolled up to form long hollow tubes. SWCNTs possess exceptional thermal, mechanical and electrical properties. These remarkable properties lead to advances in performance in a wide range of materials and devices. Single-walled carbon nanotubes are actively used in diverse area including energy storage, molecular electronics, nanomechanial devices, composites and bio-sensing. Our Single Wall Carbon Nanotubes compete on price and performance with counterparts.

Scandium (Sc) Micron Powder Purity: 99.5 %, Size: 325 mesh

Price range: $101.00 through $2,794.00
Select options This product has multiple variants. The options may be chosen on the product page
1 gram/90 € 5 grams/294 € 25 grams/885 € 100 grams/2479 €    

Carbon Nanotube (CNT) Nanoribbon

Price range: $201.00 through $2,784.00
Select options This product has multiple variants. The options may be chosen on the product page
Manufacturing Method:Ribbon is produced by chemical oxidation and longitudinal opening using strong oxidizing agents.

Ytterbium (Yb) Micron Powder Purity: 99.5 %, Size: 325 mesh

Price range: $50.00 through $2,773.00
Select options This product has multiple variants. The options may be chosen on the product page
1 gram/45 € 5 grams/194 € 25 grams/760 € 100 grams/2460 € 

Carbon Nanofibers, Purity: > 96%, Outside Diameter: 190-590 nm

Price range: $15.00 through $2,766.00
Select options This product has multiple variants. The options may be chosen on the product page

Carbon Nanofibers

Purity: > 96%,  Outside Diameter: 190-590 nm

Carbon nanofibers (CNFs) are fibrous carbon nanomaterials, have average diameters ranging from 125 to 150 nm depending upon the grade, and have lengths ranging from 50 to 100 µm. Carbon nanofibers (CNFs) have shown expectancy for many potential applications such as polymer reinforcements, energy storage materials, electrical devices, self-sensing devices and catalysts or catalyst supports.Most likely, we will see these carbon nanofibrous materials in many more applications across scientific and technological disciplines in the future. For applications requiring the highest uniformity in size and shape, we offer Carbon nanofibers with low price and high purity.

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

Price range: $594.00 through $2,748.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

Price range: $594.00 through $2,748.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)

Indium Arsenide (InAs) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

Price range: $601.00 through $2,746.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/545 € 5 pieces/2490 €                           Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Zinc/Sulphur (Zn/S, N Type)
Orientation  100
Mobility  6000-20000
EPD  ≤50000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

Price range: $601.00 through $2,740.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/545 € 5 pieces/2485 €                 Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality  Mechanical Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤0.3
4H area  100%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤10
Bow  ≤10
Warp  ≤25
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

99.9% 500nm Lithium Titanate (Li2TiO3) Powder

Price range: $594.00 through $2,739.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.9% 500nm Lithium Titanate (Li2TiO3) Powder
CAS No. 12031-82-2
Appearance White to off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 500nm (Size Can be customized),  Ask for other available size range.
Ingredient Li2TiO3
Molecular Weight 109.75 g/mol
Melting Point 1530 °C
Boiling Point N/A
Density 3.40 g/cm³
Product Codes NCZ-229I
 

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

Price range: $594.00 through $2,736.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Mechanical Grade Size (inch)  4”

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

Price range: $623.00 through $2,734.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565 € 5 pieces/2480 €                          Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 1

Technical Properties:

Quality  Production Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤0.3
4H area  1
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤10
Bow  ≤10
Warp  ≤25
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

45s Bioglass(Actimins, 45%SiO2+24.5%Na2O+24.5%CaO+6%P2O5, >98%, 1-2mm) (811982)

$2,730.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

45s Bioglass(Actimins, 45%SiO2+24.5%Na2O+24.5%CaO+6%P2O5, >98%, 1-2mm) (811982)

CAS No.

957049‑68‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

  1–2 mm(Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Not defined (amorphous); ~330 g/mol estimate

Melting Point

 ~1100 – 1200 °C

Boiling Point

N/A

Density

 ~2.7 g/cm³

Product Codes

NCZ-2616K

45s Bioglass(Actimins, 45%SiO2+24.5%Na2O+24.5%CaO+6%P2O5, >98%, 10μm) (410982)

$2,730.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

45s Bioglass(Actimins, 45%SiO2+24.5%Na2O+24.5%CaO+6%P2O5, >98%, 10μm) (410982)

CAS No.

957049-68-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

  ~10 μm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~331.3 g/mol (average per formula unit)

Melting Point

 ~1100 – 1200 °C

Boiling Point

N/A

Density

~2.7–2.8 g/cm³

Product Codes

NCZ-2615K

45s Bioglass(Actimins, 45%SiO2+24.5%Na2O+24.5%CaO+6%P2O5, >98%, 5μm) (210982)

$2,730.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

45s Bioglass(Actimins, 45%SiO2+24.5%Na2O+24.5%CaO+6%P2O5, >98%, 5μm) (210982)

CAS No.

 957049‑68‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

  5μm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~330.165 g/mol

Melting Point

 ~1100 – 1200 °C

Boiling Point

N/A

Density

 ~2.7 – 2.8 g/cm³

Product Codes

NCZ-2614K

Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Price range: $582.00 through $2,712.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Dummy Grade Size (inch)  4”

Short Single Walled Carbon Nanotubes, Purity: > 92%

Price range: $174.00 through $2,705.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Single Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Graphdiyne Powder

Price range: $250.00 through $2,700.00
Select options This product has multiple variants. The options may be chosen on the product page

Product Name: Graphdiyne Powder

Product Graphdiyne Powder
Pack Size 10 mg, 20 mg, 50 mg, 100 mg & 1 gram
CAS No. 154702-15-5
Product Code NCZ-GD-104
APPLICATION FIELDS

Graphdiyne (GDY) is a new type of two-dimensional carbon allotrope. It is a new all-carbon nanostructured material after fullerenes, carbon nanotubes and graphene. In 2010, Li Yuliang, Academician Group For the first time, a high-quality graphene film was successfully synthesized on the surface of Cu foil by the cross-coupling reaction of hexamethylene benzene precursor. Graphene has a rich carbon chemical bond, a large conjugated system, wide interplanar spacing, and excellent chemical stability. It is known as the most stable allotrope of synthetic diacetylene. Its unique sp-sp2 carbon atoms, uniform pores and high π-conjugated structure have shown broad application prospects in gas separation, catalysis, water treatment, humidity sensors and energy.

The synthesis of Graphdiyne was reported as a 1 mm film on a copper surface. Graphdiyne was predicted to exhibit a nanoweb-like structure, characterized by triangular and regularly distributed pores, thus forming a nanoporous membrane. Due to the effective size of its pores, which almost matches the van der Waals radius of the helium atom, graphdiyne could behave as an ideal two-dimensional membrane for helium chemical and isotopic separation. The application of a graphdiyne based membrane as an efficient two-dimensional sieve for water filtration and purification technologies has been proposed.

RELATED INFORMATION Storage Conditions: Sealed, avoid light, keep dry at room temperature. 

Graphdiyne Oxide Powder

Price range: $250.00 through $2,700.00
Select options This product has multiple variants. The options may be chosen on the product page

Product Name: Graphdiyne Oxide Powder

Product Graphdiyne Oxide Powder
Pack Size 10 mg, 20 mg, 50 mg, 100 mg & 1 gram
CAS No. 154702-15-5
Product Code NCZ-GD-105
APPLICATION FIELDS

Graphdiyne (GDY) is a new type of two-dimensional carbon allotrope. It is a new all-carbon nanostructured material after fullerenes, carbon nanotubes and graphene. In 2010, Li Yuliang, Academician Group For the first time, a high-quality graphene film was successfully synthesized on the surface of Cu foil by the cross-coupling reaction of hexamethylene benzene precursor. Graphene has a rich carbon chemical bond, a large conjugated system, wide interplanar spacing, and excellent chemical stability. It is known as the most stable allotrope of synthetic diacetylene. Its unique sp-sp2 carbon atoms, uniform pores and high π-conjugated structure have shown broad application prospects in gas separation, catalysis, water treatment, humidity sensors and energy.

The synthesis of Graphdiyne was reported as a 1 mm film on a copper surface. Graphdiyne was predicted to exhibit a nanoweb-like structure, characterized by triangular and regularly distributed pores, thus forming a nanoporous membrane. Due to the effective size of its pores, which almost matches the van der Waals radius of the helium atom, graphdiyne could behave as an ideal two-dimensional membrane for helium chemical and isotopic separation. The application of a graphdiyne based membrane as an efficient two-dimensional sieve for water filtration and purification technologies has been proposed.

RELATED INFORMATION Storage Conditions: Sealed, avoid light, keep dry at room temperature. 

High Purity Atomized Spherical Magnesium (Mg) Powder NGW20

Price range: $445.00 through $2,694.00
Select options This product has multiple variants. The options may be chosen on the product page
500 grams/395 € 1 kg/565 € 5 kg/2390 €   
Please contact us for quotes on larger quantities !!!

High Purity Atomized Spherical Magnesium (Mg) Powder NGW20

High purity atomized spherical magnesium powder is manufacturing by the centrifugal atomization technology that is melting minimum 99.8% purity magnesium and spraying the molten metal under the protection of an inert atmosphere. High purity atomized spherical magnesium powder is known with the outstanding features of high apparent density, high content of active magnesium, high fluidity, high stability, small particle size and small specific surface, and so on.

Technical Properties:

Particle Shape

Spherical Particle

Spherical Rate (%)

≥95

Apparent Density (g·cm-3 )

0.9 (min)

Bulk Density (g·cm-3 )

0.70 (min)

Liquidity (s·(50g)-1 )

78.6

Moisture Absorption (%)

0.01

Active Mg Content (%)

99.0 (min)

D50 (µm)

20±4

Impurity Content (%)

Moisture Content (%max)

0.08

HCl Undissolved Substance (%max)

0.047

Oil Content (%max)

0.00

Fe (%max)

0.045

Mn (%max)

0.008

Zn (%max)

0.008

Cl (%max)

0.004

                               

Applications:

High purity atomized spherical magnesium powder is widely used in the fields like aviation, national defense, composite materials, powder metallurgy, petrochemical catalyst, electronic coating, medicine, foods and new type functional materials and so on.

Hafnium Diboride (HfB2) Powder, 98.5% Purity, -325 Mesh

Price range: $1,889.00 through $2,689.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Hafnium Diboride (HfB2) Powder, 98.5% Purity, -325 Mesh
CAS No. 12069-90-6
Appearance Black to dark gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 44µm (Size Can be customized),  Ask for other available size range.
Ingredient HfB₂
Molecular Weight \N/A
Melting Point 3,250 °C
Boiling Point N/A
Density 11.2 g/cm³
Product Codes NCZ-371I
 

Platinum (Pt) Nanopowder/Nanoparticles Dispersion, Purity: 99.99%, Size: 10 nm, 1100 ppm

Price range: $137.00 through $2,685.00
Select options This product has multiple variants. The options may be chosen on the product page
Platinum (Pt) Nanopowder/Nanoparticles Dispersion Purity: 99.99%, Size: 10 nm, 1100 ppm Technical Properties: Pt Nanoparticle Purity (%) 99,99 Pt Concentration (wt%/ppm) 0,1/1100