Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$241.00

Product 

Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

 7782‑42‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

~3,652 °C (no liquid phase)

Boiling Point

 ~4,200 °C

Density

 ~2.25 g/cm³

Product Codes

NCZ-2351K

Iron (Fe) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$242.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Aluminum (Al) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$243.00

Product 

Aluminum (Al) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

 7429-90-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 26.98 g/mol

Melting Point

 660.3 °C

Boiling Point

 2519 °C

Density

 2.70 g/cm³

Product Codes

NCZ-2567K

Cobalt (Co) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$244.00

Applications of Sputtering Targets;

For film deposition, sputtering targets are employed. Using a "target" source to erode material onto a "substrate" like a silicon wafer, sputter targets are a technique for depositing thin layers. Targets are etched using semiconductor sputtering targets. When etching anisotropy is required to a great degree and selectivity is not an issue, sputter etching is the method of choice. By etching away the target material, sputter targets are also utilized for investigation. In one instance, the target sample is sputtered at a steady pace in secondary ion spectroscopy (SIMS). Using mass spectrometry, the concentration and identity of the spewed atoms are determined when the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical element cobalt has the atomic number 27 and the symbol Co. Cobalt is a silver-gray, hard, and shiny metal. Because it is one of only three room temperature ferromagnets with unaxial symmetry and hence suitability for digital recording, cobalt is employed in the production of high-strength, wear-resistant alloys as well as magnetic recording.

Nickel Vanadium (NiV) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$244.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, Purity: 99.995%, Size: 5”, Thickness: 0.250”

$244.00

Product 

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, Purity: 99.995%, Size: 5'', Thickness: 0.250''

CAS No.

7631-86-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

60.08 g/mol

Melting Point

~1710°C

Boiling Point

 ~2,950 °C

Density

~2.20 g/cm³

Product Codes

NCZ-1713K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$244.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2249K

Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$244.00

Product 

Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

7440-50-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

63.55 g/mol

Melting Point

1,084 °C

Boiling Point

 2,562 °C

Density

8.96 g/cm³

Product Codes

NCZ-2263K

Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$244.00

Product 

Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

 7782‑42‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

~3,652 °C (no liquid phase)

Boiling Point

 ~4,200 °C

Density

 ~2.25 g/cm³

Product Codes

NCZ-2350K

Nickel (Ni) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$245.00

Product 

Nickel (Ni) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

7440-02-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 58.69 g/mol

Melting Point

~1453–1455 °C

Boiling Point

~2913 °C

Density

 8.90 g/cm³

Product Codes

NCZ-1882K

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 4”, Thickness: 0.250”

$246.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$246.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum (Mo) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$246.00

Product 

Molybdenum (Mo) Sputtering Targets, Purity: 99.95%, Size: 4'', Thickness: 0.250''

CAS No.

 7439-98-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

95.95 g/mol

Melting Point

 2623 °C

Boiling Point

 4639 °C

Density

10.28 g/cm³

Product Codes

NCZ-1934K

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$246.00

Product 

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

7439-95-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 24.305 g/mol

Melting Point

 650 °C

Boiling Point

 1,090 °C

Density

1.738 g/cm³

Product Codes

NCZ-1999K

Zinc (Zn) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$247.00

Product 

Zinc (Zn) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''

CAS No.

7440‑66‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Zn (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

65.38 g/mol

Melting Point

419.5 °C

Boiling Point

 907 °C

Density

7.14 g/cm³

Product Codes

NCZ-1464K

Barium (Ba) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250”

$247.00

Product 

Barium (Ba) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.250''

CAS No.

7440-39-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

137.327 g/mol

Melting Point

 727 °C

Boiling Point

 1845 °C

Density

 3.51 g/cm³

Product Codes

NCZ-2492K

Barium (Ba) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$247.00

Product 

Barium (Ba) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.125''

CAS No.

7440-39-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

137.327 g/mol

Melting Point

 727 °C

Boiling Point

 1845 °C

Density

 3.51 g/cm³

Product Codes

NCZ-2493K

Selenium (Se) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$248.00

Product 

Selenium (Se) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

7782-49-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 78.96 g/mol

Melting Point

 221 °C

Boiling Point

 685 °C

Density

 4.81 g/cm³

Product Codes

NCZ-1771K

Nickel (Ni) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$250.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$250.00

Product 

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 4'', Thickness: 0.125''

CAS No.

7439-95-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 24.305 g/mol

Melting Point

 650 °C

Boiling Point

 1,090 °C

Density

1.738 g/cm³

Product Codes

NCZ-1995K

Aluminum (Al) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$250.00

Product 

Aluminum (Al) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.

 7429-90-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 26.98 g/mol

Melting Point

 660.3 °C

Boiling Point

 2519 °C

Density

 2.70 g/cm³

Product Codes

NCZ-2563K

Aluminum Silicon (AlSi) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$251.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth (Bi) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$251.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer.

Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The metal bismuth is silvery with a hint of pink and is fragile. Both in air and water, it is stable. Despite having poor thermal and electrical qualities, bismuth is used to create fusible alloys, a class of materials with low melting points that can be used in a variety of applications, such as thermal fuses and solders. Because pure bismuth exhibits a high absorption of gamma rays, it can be used as a window or filter for these particles while allowing neutrons to pass through.

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, Purity: 99.995%, Size: 6”, Thickness: 0.250”

$251.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$251.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2247K

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$252.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$252.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$252.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Neodymium (Nd) Sputtering Target

Price range: $252.00 through $694.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Neodymium (Nd) Sputtering Target

CAS No.

7440-00-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

144.24 g/mol

Melting Point

1,024 °C

Boiling Point

3,074 °C

Density

7.01 g/cm³

Product Codes

NCZ-1356K

Praseodymium (Pr) Sputtering Target

Price range: $252.00 through $694.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Praseodymium (Pr) Sputtering Target

CAS No.

7440-10-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

140.91 g/mol

Melting Point

 931 °C

Boiling Point

3,129 °C

Density

6.77 g/cm³

Product Codes

NCZ-1358K

Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$253.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$253.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Iron (Ni-Fe) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$253.00

Product 

Nickel Iron (Ni-Fe) Sputtering Targets, Purity: 99.95%, Size: 2'', Thickness: 0.250''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~57.6 g/mol

Melting Point

~1,430 – 1,480 °C

Boiling Point

 ~2,730 – 2,750 °C

Density

 ~8.5 – 8.7 g/cm³

Product Codes

NCZ-1845K

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$253.00

Product 

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

 11106-97-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~110.69 g/mol

Melting Point

 ~1,400 °C

Boiling Point

 ~2,730–2,750 °C

Density

 ~8.4 – 8.5 g/cm³

Product Codes

NCZ-1858K

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 3”, Thickness: 0.250”

$253.00

Product 

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 3'', Thickness: 0.250''

CAS No.

7439-95-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 24.305 g/mol

Melting Point

 650 °C

Boiling Point

 1,090 °C

Density

1.738 g/cm³

Product Codes

NCZ-1996K

Copper (Cu) Sputtering Targets, Purity: 99.99%, Size: 7”, Thickness: 0.125”

$254.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Gadolinium (Gd) Sputtering Target

Price range: $254.00 through $904.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Gadolinium (Gd) Sputtering Target

CAS No.

7440-54-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

157.25 g/mol

Melting Point

1,312 °C

Boiling Point

3,273 °C

Density

7.90 g/cm³

Product Codes

NCZ-1289K

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

With the chemical formula Al2O3, aluminum oxide is a compound made of aluminum and oxygen. Because of its high melting point, Al2O3 is useful as a refractory material and as an abrasive due to its hardness, as well as for the production of aluminum metal.

Bismuth (Bi) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The metal bismuth is silvery with a hint of pink and is fragile. Both in air and water, it is stable. The thermal and electrical characteristics of bismuth are not good, yet

finds usage in the production of fusible alloys, a class of low-melting-point materials appropriate for a variety of functions, such as thermal fuses and solders. Because pure bismuth exhibits a high absorption of gamma rays, it can be used as a window or filter for these particles while allowing neutrons to pass through.

Due to high thermal conductivity, bimetal can be utilized in a wide range of applications, including heavy metal detection reference electrodes, devices that take use of substantial magneto-resistance, and thermoelectric conversion. Bi also has the intriguing characteristic of turning semi-metal films into semiconductors at a critical thickness of about 30 nm. These films can be deposited using a variety of methods, including laser heat evaporation, RF and DC sputtering, and pulsed deposition. Furthermore, it is significant to note that various authors have reported that the crystalline structure and morphology of Bi coatings deposited through physical vapor deposition (PVD) techniques depend on the deposition parameters, including the substrate's temperature, the potential applied to the target, the energy of the ion beam, and the rate at which energy is released during the ion beam bombardment that deposits the films. Positive pulses applied between the substrate and the target during DC sputtering can modify these parameters, improving the mechanical and density characteristics of the film.

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Iron (Ni-Fe) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, Purity: 99.995%, Size: 8”, Thickness: 0.250”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$255.00

Product 

Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

 7782‑42‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

~3,652 °C (no liquid phase)

Boiling Point

 ~4,200 °C

Density

 ~2.25 g/cm³

Product Codes

NCZ-2349K

Aluminum (Al) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.125”

$256.00

 Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum which has the chemical symbol of Al, is a silvery white, soft, ductile metal that is the third most abundant element. Aluminum is notable due to for its light weight, strength, durability and for its ability to resist corrosion. Aluminum forms an extremely thin but very strong layer of oxide film. Aluminum has also high thermal and electrical conductivity. Aluminum sputtering targets have a particularly fine-grained microstructure. This property of Aluminum sputtering targets ensures that you benefit from uniform erosion and a low susceptibility to particle formation throughout the sputtering process.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$256.00

Product 

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

1314-98-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 (ZnS) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.45 g/mol

Melting Point

~1700 °C

Boiling Point

N/A

Density

 4.09 g/cm³

Product Codes

NCZ-1509K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$257.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1641K

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”, Dark Gray to Black

$258.00

Product 

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.125'', Dark Gray to Black

CAS No.

 12033-89-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 140.28 g/mol

Melting Point

 ~1900 °C

Boiling Point

N/A

Density

~3.2 g/cm³

Product Codes

NCZ-1705K

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

$258.00

Product 

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.250''

CAS No.

1313-96-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 265.81 g/mol

Melting Point

~1512 °C

Boiling Point

N/A

Density

 4.6 – 4.9 g/cm³

Product Codes

NCZ-1809K

Bismuth (Bi) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$258.00

Product 

Bismuth (Bi) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

7440‑69‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~208.98 g/mol

Melting Point

 271.4 °C

Boiling Point

~1560 °C

Density

 ~9.78–9.80 g/cm³

Product Codes

NCZ-2440K

Nickel Vanadium (NiV) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$259.00

Product 

Nickel Vanadium (NiV) Sputtering Targets, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

11137-91-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~57.9 g/mol

Melting Point

~1,350–1,450 °C

Boiling Point

N/A

Density

 ~8.5 g/cm³

Product Codes

NCZ-1828K

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.125”

$259.00

Product 

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.125''

CAS No.

 7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.93804 g/mol

Melting Point

 1,246 °C

Boiling Point

 2,061 °C

Density

 7.21 g/cm³

Product Codes

NCZ-1954K

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 4”, Thickness: 0.125”

$259.00

Product 

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 4'', Thickness: 0.125''

CAS No.

7439-95-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 24.305 g/mol

Melting Point

 650 °C

Boiling Point

 1,090 °C

Density

1.738 g/cm³

Product Codes

NCZ-1994K

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$260.00

Product 

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1741K

Aluminum (Al) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$261.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum which has the chemical symbol of Al, is a silvery white, soft, ductile metal that is the third most abundant element. Aluminum is notable due to for its light weight, strength, durability and for its ability to resist corrosion. Aluminum forms an extremely thin but very strong layer of oxide film. Aluminum has also high thermal and electrical conductivity. Aluminum sputtering targets have a particularly fine-grained microstructure. This property of Aluminum sputtering targets ensures that you benefit from uniform erosion and a low susceptibility to particle formation throughout the sputtering process.

Lithium Titanate (Li2TiO3) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$261.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$261.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Selenium (Se) Sputtering Target

Price range: $261.00 through $923.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Selenium (Se) Sputtering Target

CAS No.

7782‑49‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~78.96 u/g·mol

Melting Point

~217 °C

Boiling Point

~685 °C

Density

~4.79 g/cm³

Product Codes

NCZ-1303K

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$261.00

Product 

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

7440-33-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 183.84 g/mol

Melting Point

3422 °C

Boiling Point

 5555 °C

Density

19.25 g/cm³

Product Codes

NCZ-1591K