Nickel Iron (Ni-Fe) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$200.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, N-type, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$200.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$200.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$200.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc (Zn) Sputtering Targets, Purity: 99.99% Size: 3”, Thickness: 0.125”

$200.00

Product 

Zinc (Zn) Sputtering Targets, Purity: 99.99% Size: 3'', Thickness: 0.125''

CAS No.

7440‑66‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Zn (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

65.38 g/mol

Melting Point

419.5 °C

Boiling Point

 907 °C

Density

7.14 g/cm³

Product Codes

NCZ-1471K

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$200.00

Product 

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

7440-10-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 140.91 g/mol

Melting Point

931 °C

Boiling Point

 3520 °C

Density

 6.77 g/cm³

Product Codes

NCZ-1791K

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$200.00

Product 

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

1313-96-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 265.81 g/mol

Melting Point

~1512 °C

Boiling Point

N/A

Density

 4.6 – 4.9 g/cm³

Product Codes

NCZ-1810K

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$201.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$201.00

Product 

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

7439-95-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 24.305 g/mol

Melting Point

 650 °C

Boiling Point

 1,090 °C

Density

1.738 g/cm³

Product Codes

NCZ-2003K

Aluminum Silicon (AlSi) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$201.00

Product 

Aluminum Silicon (AlSi) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

Aluminum: 7429-90-5 Silicon: 7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Al: 26.98 g/mol Si: 28.09 g/mol

Melting Point

 ~577–660 °C (depends on Si content)

Boiling Point

~2519 °C (approx.)

Density

~2.6–2.7 g/cm³

Product Codes

NCZ-2514K

Aluminum (Al) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$201.00

Product 

Aluminum (Al) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

 7429-90-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 26.98 g/mol

Melting Point

 660.3 °C

Boiling Point

 2519 °C

Density

 2.70 g/cm³

Product Codes

NCZ-2574K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.125”

$202.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1667K

Nickel (Ni) Sputtering Targets, Purity: 99.995%, Size: 3”, Thickness: 0.125”

$202.00

Product 

Nickel (Ni) Sputtering Targets, Purity: 99.995%, Size: 3'', Thickness: 0.125''

CAS No.

7440-02-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 58.69 g/mol

Melting Point

~1453–1455 °C

Boiling Point

~2913 °C

Density

 8.90 g/cm³

Product Codes

NCZ-1884K

Nickel (Ni) Sputtering Targets, Purity: 99.995%, Size: 2”, Thickness: 0.250”

$202.00

Product 

Nickel (Ni) Sputtering Targets, Purity: 99.995%, Size: 2'', Thickness: 0.250''

CAS No.

7440-02-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 58.69 g/mol

Melting Point

~1,453 °C

Boiling Point

~2,913 °C

Density

 8.90 g/cm³

Product Codes

NCZ-1887K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$202.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2344K

Niobium (Nb) Sputtering Targets, Purity: 99.95% pure Ex Ta, Size: 2”, Thickness: 0.250”

$204.00

Product 

Niobium (Nb) Sputtering Targets, Purity: 99.95% pure Ex Ta, Size: 2'', Thickness: 0.250''

CAS No.

7440-03-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

92.906 g/mol

Melting Point

 2,468 °C

Boiling Point

 4,744 °C

Density

 8.57 g/cm³

Product Codes

NCZ-1817K

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 2”, Thickness: 0.125”

$204.00

Product 

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 2'', Thickness: 0.125''

CAS No.

7439-95-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 24.305 g/mol

Melting Point

 650 °C

Boiling Point

 1,090 °C

Density

1.738 g/cm³

Product Codes

NCZ-2002K

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$204.00

Product 

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

114.82 g/mol

Melting Point

 156.6 °C

Boiling Point

 2,072 °C

Density

 7.31 g/cm³

Product Codes

NCZ-2234K

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$205.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel (Ni) Sputtering Targets, Purity: 99.995%, Size: 3”, Thickness: 0.250”

$205.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Permalloy (Ni-Fe-Mo) Sputtering Targets, Size: 2”, Thickness: 0.125”

$205.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$205.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 2”, Thickness: 0.250”

$206.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Copper Oxide (CuO) Sputtering Target

Price range: $206.00 through $596.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Copper Oxide (CuO) Sputtering Target

CAS No.

1317-38-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.55 g/mol

Melting Point

1,320 °C

Boiling Point

Decomposes (~2,000 °C+)

Density

6.31 g/cm³

Product Codes

NCZ-1369K

Antimony (Sb) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$208.00

Product 

Antimony (Sb) Sputtering Targets, Purity: 99.95%, Size: 2'', Thickness: 0.250''

CAS No.

 7440-36-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 121.76 g/mol

Melting Point

 630.6 °C

Boiling Point

 1587 °C

Density

 6.69 g/cm³

Product Codes

NCZ-2509K

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, Purity: 99.995%, Size: 4”, Thickness: 0.250”

$209.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc (Zn) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$209.00

Product 

Zinc (Zn) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

7440‑66‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Zn (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

65.38 g/mol

Melting Point

419.5 °C

Boiling Point

 907 °C

Density

7.14 g/cm³

Product Codes

NCZ-1469K

Zinc (Zn) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$209.00

Product 

Zinc (Zn) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

7440‑66‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Zn (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

65.38 g/mol

Melting Point

419.5 °C

Boiling Point

 907 °C

Density

7.14 g/cm³

Product Codes

NCZ-1470K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$210.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$210.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium oxide is an oxide of erbium metal, having the chemical formula Er2O3.

Magnesium (Mg) Sputtering Targets, Purity: 99.98%, Size: 3”, Thickness: 0.125”

$210.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc (Zn) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$210.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Manganese (Mn) Sputtering Target

Price range: $210.00 through $956.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Manganese (Mn) Sputtering Target

CAS No.

7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.938 g/mol

Melting Point

1,246 °C

Boiling Point

2,061 °C

Density

1.738 g/cm³

Product Codes

NCZ-1297K

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$210.00

Product 

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

7440‑62‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

V(Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.94 g/mol

Melting Point

1890 °C

Boiling Point

3380 °C

Density

 ~6.11 g/cm³

Product Codes

NCZ-1396K

Aluminum Silicon (AlSi) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$210.00

Product 

Aluminum Silicon (AlSi) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

Aluminum: 7429-90-5 Silicon: 7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Al: 26.98 g/mol Si: 28.09 g/mol

Melting Point

 ~577–660 °C (depends on Si content)

Boiling Point

~2519 °C (approx.)

Density

~2.6–2.7 g/cm³

Product Codes

NCZ-2516K

Niobium (Nb) Sputtering Targets, Purity: 99.95% pure Ex Ta, Size: 4”, Thickness: 0.125”

$211.00

Product 

Niobium (Nb) Sputtering Targets, Purity: 99.95% pure Ex Ta, Size: 4'', Thickness: 0.125''

CAS No.

7440-03-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

92.906 g/mol

Melting Point

 2,468 °C

Boiling Point

 4,744 °C

Density

 8.57 g/cm³

Product Codes

NCZ-1814K

Niobium (Nb) Sputtering Targets, Purity: 99.95% pure Ex Ta, Size: 3”, Thickness: 0.125”

$211.00

Product 

Niobium (Nb) Sputtering Targets, Purity: 99.95% pure Ex Ta, Size: 3'', Thickness: 0.125''

CAS No.

7440-03-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

92.906 g/mol

Melting Point

 2,468 °C

Boiling Point

 4,744 °C

Density

 8.57 g/cm³

Product Codes

NCZ-1816K

Nickel Iron (Ni-Fe) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$211.00

Product 

Nickel Iron (Ni-Fe) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~57.6 g/mol

Melting Point

 ~1,400 – 1,450 °C

Boiling Point

~2,730 – 2,750 °C

Density

 ~8.6 – 8.7 g/cm³

Product Codes

NCZ-1847K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$211.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2245K

Aluminum (Al) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$213.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum which has the chemical symbol of Al, is a silvery white, soft, ductile metal that is the third most abundant element. Aluminum is notable due to for its light weight, strength, durability and for its ability to resist corrosion. Aluminum forms an extremely thin but very strong layer of oxide film. Aluminum has also high thermal and electrical conductivity. Aluminum sputtering targets have a particularly fine-grained microstructure. This property of Aluminum sputtering targets ensures that you benefit from uniform erosion and a low susceptibility to particle formation throughout the sputtering process.

Aluminum (Al) Sputtering Targets, Purity: 99.999%, Size: 6”, Thickness: 0.125”

$213.00

 Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum which has the chemical symbol of Al, is a silvery white, soft, ductile metal that is the third most abundant element. Aluminum is notable due to for its light weight, strength, durability and for its ability to resist corrosion. Aluminum forms an extremely thin but very strong layer of oxide film. Aluminum has also high thermal and electrical conductivity. Aluminum sputtering targets have a particularly fine-grained microstructure. This property of Aluminum sputtering targets ensures that you benefit from uniform erosion and a low susceptibility to particle formation throughout the sputtering process.

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, Purity: 99.995%, Size: 5”, Thickness: 0.250”

$213.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Aluminum (Al) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$213.00

Product 

Aluminum (Al) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

 7429-90-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 26.98 g/mol

Melting Point

 660.3 °C

Boiling Point

 2519 °C

Density

 2.70 g/cm³

Product Codes

NCZ-2572K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$214.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$214.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Oxide (MoO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$214.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$215.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc (Zn) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$215.00

Product 

Zinc (Zn) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

7440‑66‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Zn (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

65.38 g/mol

Melting Point

419.5 °C

Boiling Point

 907 °C

Density

7.14 g/cm³

Product Codes

NCZ-1467K

Zinc (Zn) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$215.00

Product 

Zinc (Zn) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.250''

CAS No.

7440‑66‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Zn (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

65.38 g/mol

Melting Point

419.5 °C

Boiling Point

 907 °C

Density

7.14 g/cm³

Product Codes

NCZ-1468K

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, Purity: 99.995%, Size: 4”, Thickness: 0.125”

$215.00

Product 

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, Purity: 99.995%, Size: 4'', Thickness: 0.125''

CAS No.

7631-86-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

60.08 g/mol

Melting Point

~1710°C

Boiling Point

 ~2,950 °C

Density

~2.20 g/cm³

Product Codes

NCZ-1714K

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$215.00

Product 

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

 11106-97-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~110.69 g/mol

Melting Point

 ~1,400 °C

Boiling Point

 ~2,730–2,750 °C

Density

 ~8.4 – 8.5 g/cm³

Product Codes

NCZ-1859K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$215.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2243K

Zinc (Zn) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$216.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Barium (Ba) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250′

$217.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A Block S, Group 2, Period 6 element with an atomic weight of 137.27, barium has the atomic symbol Ba and atomic number 56. One of the alkaline-earth metals is barium. Electronics can be plated using barium sputtering targets. Barium has favorable electrical characteristics.

Barium (Ba) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$217.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A Block S, Group 2, Period 6 element with an atomic weight of 137.27, barium has the atomic symbol Ba and atomic number 56. One of the alkaline-earth metals is barium. Electronics can be plated using barium sputtering targets. Barium has favorable electrical characteristics.

Nickel (Ni) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$217.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide with Alumina (ZnO/Al2O3) Sputtering Target

Price range: $217.00 through $727.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Zinc Oxide with Alumina (ZnO/Al2O3) Sputtering Target

CAS No.

1314-13-2 (ZnO) / 1344-28-1 (Al₂O₃)

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

81–90 g/mol

Melting Point

~1,975 °C (ZnO), ~2,050 °C (Al₂O₃)

Boiling Point

N/A

Density

~5.6 g/cm³

Product Codes

NCZ-1332K

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$217.00

Product 

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

 2.33 g/cm³

Product Codes

NCZ-1734K

Niobium (Nb) Sputtering Targets, Purity: 99.95% pure Ex Ta, Size: 3”, Thickness: 0.250”

$217.00

Product 

Niobium (Nb) Sputtering Targets, Purity: 99.95% pure Ex Ta, Size: 3'', Thickness: 0.250''

CAS No.

7440-03-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

92.906 g/mol

Melting Point

 2,468 °C

Boiling Point

 4,744 °C

Density

 8.57 g/cm³

Product Codes

NCZ-1815K

Nickel Vanadium (NiV) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$217.00

Product 

Nickel Vanadium (NiV) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.250''

CAS No.

11137-91-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~57.9 g/mol

Melting Point

~1,350–1,450 °C

Boiling Point

N/A

Density

 ~8.5 g/cm³

Product Codes

NCZ-1829K