Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$1,423.00

Product 

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 8'', Thickness: 0.250''

CAS No.

 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

101.96 g/mol

Melting Point

~2,072 °C

Boiling Point

~2,977 °C

Density

~3.97–3.98 g/cm³

Product Codes

NCZ-2527K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”, Beige to White

$1,430.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,436.00

Product 

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

 ~6.5–7.0 g/cm³

Product Codes

NCZ-2120K

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$1,440.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$1,442.00

Product 

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

 ~6.5–7.0 g/cm³

Product Codes

NCZ-2122K

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,442.00

Product 

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

13538-87-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

240.83 g/mol

Melting Point

 ~2300 °C

Boiling Point

N/A

Density

~6.3 – 6.8 g/cm³

Product Codes

NCZ-2136K

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$1,449.00

Product 

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.125''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

 ~6.5–7.0 g/cm³

Product Codes

NCZ-2117K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$1,450.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$1,450.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 4'', Thickness: 0.250''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

~158 °C (likely decomposition)

Density

 ~2.53 g/cm³

Product Codes

NCZ-2028K

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 5”, Thickness: 0.250”

$1,451.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 5'', Thickness: 0.250''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

 ~2.53 g/cm³

Product Codes

NCZ-2026K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,452.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2328K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$1,456.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

$1,458.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Magnesium Oxide (MgO) Sputtering Targets, indium, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$1,458.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1956K

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

$1,458.00

Product 

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''

CAS No.

 12010‑42‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 0.5–2 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~312.82 g/mol

Melting Point

 ~1255 °C (bulk material)

Boiling Point

N/A

Density

~8.22 g/cm³

Product Codes

NCZ-2418K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$1,478.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2329K

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,487.00

Product 

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

276.55 g/mol

Melting Point

Decomposes before melting (~2600 °C)

Boiling Point

N/A

Density

~5.52 g/cm³

Product Codes

NCZ-2441K

Barium Titanate (BaTiO3) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,494.00

Product 

Barium Titanate (BaTiO3) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233.19 g/mol

Melting Point

~1625 °C

Boiling Point

N/A

Density

 ~6.02 g/cm³

Product Codes

NCZ-2449K

Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,497.00

Product 

Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

 ~68189‑52‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

234–237 g/mol

Melting Point

 ~1300–1400 °C

Boiling Point

N/A

Density

~6.3–6.5 g/cm³

Product Codes

NCZ-2103K

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,500.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$1,504.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2324K

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,512.00

Product 

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

231.84 g/mol

Melting Point

1,473 °C

Boiling Point

1,700–1,850 °C

Density

7.16 g/cm³

Product Codes

NCZ-1566K

Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$1,514.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$1,518.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2399K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$1,518.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2400K

Molybdenum Disulfide (MoS2) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

$1,522.00

Product 

Molybdenum Disulfide (MoS2) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.125''

CAS No.

 1317-33-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 160.07 g/mol

Melting Point

 ~1185 °C

Boiling Point

 ~4500 °C

Density

 ~5.06 g/cm³

Product Codes

NCZ-1909K

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

$1,523.00

Product 

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~245.6 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

 ~6.5 – 7.2 g/cm³ (depends on sintering quality)

Product Codes

NCZ-2112K

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$1,523.00

Product 

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''

CAS No.

13538-87-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

240.83 g/mol

Melting Point

 ~2300 °C

Boiling Point

N/A

Density

~6.3 – 6.8 g/cm³

Product Codes

NCZ-2135K

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

$1,528.00

Product 

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.125''

CAS No.

 12010‑42‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 0.5–2 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

≈ 312.82 g/mol

Melting Point

≈ 960 °C

Boiling Point

N/A

Density

 ≈ 8.34 g/cm³

Product Codes

NCZ-2417K

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.250”

$1,530.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A chemical compound consisting of barium and fluorine, barium fluoride (BaF2) is a salt. It is a solid that has the potential to be a clear crystal. A is barium fluoride.

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.125”

$1,530.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A chemical compound consisting of barium and fluorine, barium fluoride (BaF2) is a salt. It is a solid that has the potential to be a clear crystal. One chemical compound for the 10–20 µm wavelength infrared area is barium fluoride. Enamel, glazing frits, and aluminum metallurgy all use barium fluoride.

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5, Size: 8”, Thickness: 0.250”

$1,536.00

Product 

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5, Size: 8'', Thickness: 0.250''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2380K

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,540.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A solid mixture of barium titanate (BaTiO3) and strontium titanate (SrTiO3) is called barium strontium titanate (BST). Sputtering techniques yield thin coatings of barium strontium titanate (BST), which confers exceptional dielectric characteristics to materials. Because of their numerous uses in tunable microwave devices including phase shifters, delay lines, resonators, and varactors, barium strontium titanate (BST) based ferroelectric thin film devices have become more and more well-known over the past ten years.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”, Beige to White

$1,544.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$1,550.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A solid mixture of barium titanate (BaTiO3) and strontium titanate (SrTiO3) is called barium strontium titanate (BST). Sputtering techniques yield thin coatings of barium strontium titanate (BST), which confers exceptional dielectric characteristics to materials. Due to this, BST-based barium strontium titanate

The past ten years have seen a rise in the popularity of ferroelectric thin film devices because of its numerous uses in tunable microwave devices, including phase shifters, delay lines, resonators, and varactors.

Thin films of barium strontium titanate show great promise because of their low dielectric loss, high dielectric constant, and tunability. There have been reports on the dielectric-tunable properties of barium strontium titanate films produced by various deposition processes. These properties investigate the impacts of several parameters, including grain size, Ba/Sr ratio, oxygen vacancies, and film thickness. To get more tunability and less loss, researchers have also looked at doping concentrations, high temperature annealing, and multilayer architectures.

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,556.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,558.00

Product 

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

 ~6.5–7.0 g/cm³

Product Codes

NCZ-2121K

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.125”

$1,560.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,562.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,562.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,562.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2323K

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 8”, Thickness: 0.125”

$1,562.00

Product 

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 8'', Thickness: 0.125''

CAS No.

 10043-11-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

24.82 g/mol

Melting Point

~2973 °C

Boiling Point

N/A

Density

~2.1 g/cm³

Product Codes

NCZ-2365K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7”, Thickness: 0.125”

$1,568.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2322K

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$1,569.00

Product 

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.

• Indium Oxide (In₂O₃): 1312-43-2 • Tin Oxide (SnO₂): 18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Approx. 292.6 g/mol (based on 90:10 wt% In₂O₃:SnO₂ blend)

Melting Point

 ~1,800 °C (sintered ceramic composite; no sharp melting point)

Boiling Point

N/A

Density

 ~7.15 g/cm³

Product Codes

NCZ-2202K

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,570.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2316K

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

$1,575.00

Product 

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''

CAS No.

12010‑42‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

0.5–2 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

312.82 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

8.22 g/cm³

Product Codes

NCZ-2416K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$1,578.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 4'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1970K

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$1,579.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Ferrite (BiFeO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,579.00

Product 

Bismuth Ferrite (BiFeO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

 12022-74-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 240.76 g/mol

Melting Point

 ~930 °C

Boiling Point

N/A

Density

 ~8.3–8.5 g/cm³

Product Codes

NCZ-2413K

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,586.00

Product 

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

 12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233–300 g/mol (composition dependent)

Melting Point

 ~1625 °C (approximate)

Boiling Point

N/A

Density

~5.5–6.0 g/cm³ (depending on Ba:Sr ratio)

Product Codes

NCZ-2472K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7”, Thickness: 0.250”

$1,597.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2321K

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,602.00

Product 

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

 7787-32-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

175.32 g/mol

Melting Point

 1,368 °C

Boiling Point

2,260 °C

Density

 4.89 g/cm³

Product Codes

NCZ-2482K

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,602.00

Product 

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

 7787-32-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

175.32 g/mol

Melting Point

 1,368 °C

Boiling Point

2,260 °C

Density

 4.89 g/cm³

Product Codes

NCZ-2483K

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$1,602.00

Product 

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

12068-69-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

626.32 g/mol

Melting Point

620 °C

Boiling Point

N/A

Density

6.50 g/cm³

Product Codes

NCZ-2494K

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$1,602.00

Product 

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

12068-69-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

626.32 g/mol

Melting Point

620 °C

Boiling Point

N/A

Density

6.50 g/cm³

Product Codes

NCZ-2495K

Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$1,606.00

Product 

Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 4'', Thickness: 0.125''

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

61.88 g/mol

Melting Point

 ~2950 °C

Boiling Point

~4300 °C

Density

5.22 g/cm³

Product Codes

NCZ-1596K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”, Beige to White

$1,608.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$1,609.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2320K

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.125”

$1,620.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”, Beige to White

$1,620.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.