Silicon Dioxide (SiO2) Sputtering Target

Price range: $105.00 through $388.00
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Product 

Silicon Dioxide (SiO2) Sputtering Target

CAS No.

7631-86-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 60.08 g/mol

Melting Point

~1,710 °C

Boiling Point

~2,950 °C

Density

~2.2–2.65 g/cm³

Product Codes

NCZ-1323K

Niobium Oxide (Nb2O5) Sputtering Target

Price range: $115.00 through $526.00
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Product 

Niobium Oxide (Nb2O5) Sputtering Target

CAS No.

1313-96-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

265.81 g/mol

Melting Point

~1,510 °C

Boiling Point

N\A

Density

~4.6–4.9 g/cm³

Product Codes

NCZ-1322K

Nickel Oxide (NiO) Sputtering Target

Price range: $357.00 through $990.00
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Product 

Nickel Oxide (NiO) Sputtering Target

CAS No.

1313-99-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

74.69 g/mol

Melting Point

~1,950 °C

Boiling Point

~2,730 °C

Density

~6.67 g/cm³

Product Codes

NCZ-1321K

Magnesium Oxide (MgO) Sputtering Target

Price range: $423.00 through $901.00
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Product 

Magnesium Oxide (MgO) Sputtering Target

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2,800 °C

Boiling Point

 ~3,600 °C

Density

~3.58 g/cm³

Product Codes

NCZ-1320K

Lithium Niobate (LiNbO3) Sputtering Target

Price range: $547.00 through $993.00
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Product 

Lithium Niobate (LiNbO3) Sputtering Target

CAS No.

 12031-63-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

147.85 g/mol

Melting Point

~1,250 °C

Boiling Point

NA

Density

~4.65 g/cm³

Product Codes

NCZ-1319K

Lead Zirconate (PbZrO3) Sputtering Target

Price range: $566.00 through $993.00
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Lead Zirconate (PbZrO3) Sputtering Target

CAS No.

 19824-65-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

303.5 g/mol

Melting Point

~1,250–1,300 °C

Boiling Point

NA

Density

~8.3–8.5 g/cm³

Product Codes

NCZ-1318K

Lanthanum Aluminate (LaAlO3) Sputtering Target

Price range: $427.00 through $928.00
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Product 

Lanthanum Aluminate (LaAlO3) Sputtering Target

CAS No.

12003-62-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

221.89 g/mol

Melting Point

~2,078 °C

Boiling Point

N\A

Density

~6.52 g/cm³

Product Codes

NCZ-1317K

Indium Oxide (In2O3) Sputtering Target

Price range: $339.00 through $1,265.00
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Product 

Indium Oxide (In2O3) Sputtering Target

CAS No.

1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

277.64 g/mol

Melting Point

~1,910 °C

Boiling Point

~3,000 °C

Density

~7.18 g/cm³

Product Codes

NCZ-1316K

Cerium Oxide (CeO2) Sputtering Target

Price range: $511.00 through $1,492.00
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Product 

Cerium Oxide (CeO2) Sputtering Target

CAS No.

1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

172.11 g/mol

Melting Point

~2,400 °C

Boiling Point

~3,500 °C

Density

~7.22 g/cm³

Product Codes

NCZ-1315K

Nickel Chromium (Ni/Cr) Sputtering Target

Price range: $89.00 through $434.00
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Product 

Nickel Chromium (Ni/Cr) Sputtering Target

CAS No.

11114-46-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

58.0–59.0 g/mol

Melting Point

1390–1420 °C

Boiling Point

2730–2900 °C

Density

8.2 – 8.4 g/cm³

Product Codes

NCZ-1314K

Aluminum Silicon (Al/Si) Sputtering Target

Price range: $92.00 through $397.00
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Product 

Aluminum Silicon (Al/Si) Sputtering Target

CAS No.

12004-15-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~65–70 g/mol

Melting Point

~548 °C

Boiling Point

~2,400–2,550 °C

Density

~2.78 g/cm³

Product Codes

NCZ-1313K

Aluminum Copper (Al/Cu) Sputtering Target

Price range: $150.00 through $515.00
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Product 

Aluminum Copper (Al/Cu) Sputtering Target

CAS No.

12004‑15‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

89.911 g/mol

Melting Point

~ 548 °C

Boiling Point

≈ 2,400 °C to 2,550 °C

Density

6.52 g/cm³

Product Codes

NCZ-1312K

Zirconium (Zr) Sputtering Target

Price range: $75.00 through $455.00
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Product 

Zirconium (Zr) Sputtering Target

CAS No.

7440-67-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

91.224 g/mol

Melting Point

1,855 °C

Boiling Point

4,409 °C

Density

6.52 g/cm³

Product Codes

NCZ-1311K

Zinc (Zn) Sputtering Target

Price range: $70.00 through $390.00
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Product 

Zinc (Zn) Sputtering Target

CAS No.

7440-66-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

65.38 g/mol

Melting Point

419.5 °C

Boiling Point

907 °C

Density

 7.14 g/cm³

Product Codes

NCZ-1310K

Ytterbium (Yb) Sputtering Target

Price range: $328.00 through $1,520.00
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Product 

Ytterbium (Yb) Sputtering Target

CAS No.

7440‑64‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

~824 °C

Boiling Point

~1,196 °C

Density

~6.9 g/cm³

Product Codes

NCZ-1309K

Vanadium (V) Sputtering Target

Price range: $133.00 through $547.00
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Product 

Vanadium (V) Sputtering Target

CAS No.

7440-62-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

1,910 °C

Boiling Point

3,407 °C

Density

 6.11 g/cm³

Product Codes

NCZ-1308K

Tungsten (W) Sputtering Target

Price range: $63.00 through $629.00
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Product 

Tungsten (W) Sputtering Target

CAS No.

7440-33-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.84 g/mol

Melting Point

3,422 °C

Boiling Point

5,555 °C

Density

19.25 g/cm³

Product Codes

NCZ-1307K

Tin (Sn) Sputtering Target

Price range: $63.00 through $441.00
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Product 

Tin (Sn) Sputtering Target

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2,602 °C

Density

7.31 g/cm³

Product Codes

NCZ-1306K

Tantalum (Ta) Sputtering Target

Price range: $137.00 through $904.00
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Product 

Tantalum (Ta) Sputtering Target

CAS No.

7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3,017 °C

Boiling Point

5,458 °C

Density

16.69 g/cm³

Product Codes

NCZ-1305K

Silver (Ag) Sputtering Target

Price range: $189.00 through $684.00
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Product 

Silver (Ag) Sputtering Target

CAS No.

7440-22-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

107.8682 g/mol

Melting Point

 961.78 °C

Boiling Point

2,162 °C

Density

10.49 g/cm³

Product Codes

NCZ-1304K

Selenium (Se) Sputtering Target

Price range: $261.00 through $923.00
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Product 

Selenium (Se) Sputtering Target

CAS No.

7782‑49‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~78.96 u/g·mol

Melting Point

~217 °C

Boiling Point

~685 °C

Density

~4.79 g/cm³

Product Codes

NCZ-1303K

Samarium (Sm) Sputtering Target

Price range: $272.00 through $803.00
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Product 

Samarium (Sm) Sputtering Target

CAS No.

7440-19-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 150.36 g/mol

Melting Point

 1,072 °C

Boiling Point

 1,794 °C

Density

7.54 g/cm³

Product Codes

NCZ-1302K

Platinum (Pt) Sputtering Target

Price range: $0.00 through $12,410.00
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Product 

Platinum (Pt) Sputtering Target

CAS No.

 7440-05-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

195.08 g/mol

Melting Point

1,768.3 °C

Boiling Point

3,825 °C

Density

21.45 g/cm³

Product Codes

NCZ-1301K

Palladium (Pd) Sputtering Target

Price range: $0.00 through $7,030.00
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Product 

Palladium (Pd) Sputtering Target

CAS No.

 7440-05-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

106.42 g/mol

Melting Point

 1,554.9 °C

Boiling Point

2,963 °C

Density

12.02 g/cm³

Product Codes

NCZ-1300K

Niobium (Nb) Sputtering Target

Price range: $125.00 through $421.00
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Product 

Niobium (Nb) Sputtering Target

CAS No.

7440-03-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

92.906 g/mol

Melting Point

2,468 °C

Boiling Point

 4,927 °C

Density

 8.57 g/cm³

Product Codes

NCZ-1299K

Molybdenum (Mo) Sputtering Target

Price range: $98.00 through $414.00
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Product 

Molybdenum (Mo) Sputtering Target

CAS No.

7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.938 g/mol

Melting Point

1,246 °C

Boiling Point

2,061 °C

Density

1.738 g/cm³

Product Codes

NCZ-1298K

Manganese (Mn) Sputtering Target

Price range: $210.00 through $956.00
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Product 

Manganese (Mn) Sputtering Target

CAS No.

7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.938 g/mol

Melting Point

1,246 °C

Boiling Point

2,061 °C

Density

1.738 g/cm³

Product Codes

NCZ-1297K

Magnesium (Mg) Sputtering Target

Price range: $184.00 through $507.00
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Product 

Magnesium (Mg) Sputtering Target

CAS No.

7439-92-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

24.305 g/mol

Melting Point

650 °C

Boiling Point

1,090 °C

Density

1.738 g/cm³

Product Codes

NCZ-1296K

Lead (Pb) Sputtering Target

Price range: $107.00 through $519.00
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Product 

Lead (Pb) Sputtering Target

CAS No.

7439-92-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

207.2 g/mol

Melting Point

327.5 °C

Boiling Point

1,744 °C

Density

11.34 g/cm³

Product Codes

NCZ-1295K

Lanthanum (La) Sputtering Target

Price range: $375.00 through $965.00
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Product 

Lanthanum (La) Sputtering Target

CAS No.

7439-91-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

138.91 g/mol

Melting Point

920 °C

Boiling Point

3,464 °C

Density

6.16 g/cm³

Product Codes

NCZ-1294K

Indium (In) Sputtering Target

Price range: $139.00 through $787.00
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Product 

Indium (In) Sputtering Target

CAS No.

7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

114.82 g/mol

Melting Point

156.6 °C

Boiling Point

 2,072 °C

Density

7.31 g/cm³

Product Codes

NCZ-1293K

Holmium (Ho) Sputtering Target

Price range: $428.00 through $1,020.00
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Product 

Holmium (Ho) Sputtering Target

CAS No.

7440-60-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

164.930 g/mol

Melting Point

1,474 °C

Boiling Point

2,700 °C

Density

8.80 g/cm³

Product Codes

NCZ-1292K

Hafnium (Hf) Sputtering Target

Price range: $440.00 through $2,850.00
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Product 

Hafnium (Hf) Sputtering Target

CAS No.

7440-58-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 178.49 g/mol

Melting Point

2,233 °C

Boiling Point

4,603 °C

Density

13.31 g/cm³

Product Codes

NCZ-1291K

Germanium (Ge) Sputtering Target

Price range: $84.00 through $750.00
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Product 

Germanium (Ge) Sputtering Target

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

72.63 g/mol

Melting Point

937.4 °C

Boiling Point

2,830 °C

Density

 5.32 g/cm³

Product Codes

NCZ-1290K

Gadolinium (Gd) Sputtering Target

Price range: $254.00 through $904.00
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Product 

Gadolinium (Gd) Sputtering Target

CAS No.

7440-54-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

157.25 g/mol

Melting Point

1,312 °C

Boiling Point

3,273 °C

Density

7.90 g/cm³

Product Codes

NCZ-1289K

Europium (Eu) Sputtering Target

Price range: $515.00 through $1,814.00
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Product 

Europium (Eu) Sputtering Target

CAS No.

7440-53-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

151.964 g/mol

Melting Point

826 °C

Boiling Point

1,529 °C

Density

~5.24 g/cm³

Product Codes

NCZ-1288K

Chromium (Cr) Sputtering Target

Price range: $81.00 through $405.00
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Product 

Chromium (Cr) Sputtering Target

CAS No.

7440-47-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

51.996 g/mol

Melting Point

1,907 °C

Boiling Point

2,671 °C

Density

7.19 g/cm³

Product Codes

NCZ-1287K

Cadmium (Cd) Sputtering Target

Price range: $221.00 through $625.00
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Product 

Cadmium (Cd) Sputtering Target

CAS No.

7440-43-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

112.41 g/mol

Melting Point

321.07 °C

Boiling Point

767 °C

Density

8.65 g/cm³

Product Codes

NCZ-1286K

Antimony (Sb) Sputtering Target

Price range: $423.00 through $930.00
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Product 

Antimony (Sb) Sputtering Target

CAS No.

7440-36-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

121.76 g/mol

Melting Point

630.63 °C

Boiling Point

1,580 °C

Density

~6.697 g/cm³

Product Codes

NCZ-1285K

Aluminum (Al) Sputtering Target

Price range: $179.00 through $2,300.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Aluminum (Al) Sputtering Target

CAS No.

7429-90-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N\A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

26.98 g/mol

Melting Point

 660.3 °C

Boiling Point

 2,470 °C

Density

~2.70 g/cm³

Product Codes

NCZ-1284K

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$849.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$873.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$628.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$664.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,078.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$338.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$490.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$613.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$225.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$296.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$666.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$648.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$536.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$632.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125′

$996.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0

$301.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$397.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$448.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$847.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$294.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.