Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

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Prime Si+Si3N4 Wafer Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm Technical Properties: Quality Prime