Sort by
Filter by price
Filter
Show 9 12 18 24
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

, ,
Price range: $101.00 through $2,178.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/92 € 5 pieces/420 € 25 pieces/1975 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 1000 nm
Thickness (μm) 380± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

, ,
Price range: $76.00 through $1,599.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/69 € 5 pieces/310 € 25 pieces/1450 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 450 nm
Thickness (μm) 525± 25
Doping Arsenic
Resistivity (ohm.cm) 0,001-0,005
Polished One Side
  Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

, ,
Price range: $60.00 through $1,240.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/55 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

, ,
Price range: $70.00 through $1,433.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/280 € 25 pieces/1300 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

, ,
Price range: $68.00 through $1,350.00
Select options This product has multiple variants. The options may be chosen on the product page
V 1 piece/62 € 5 pieces/270 € 25 pieces/1225 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 70 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.