Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called “deposition made by sputter targets,” which entails eroding material from a “target” source onto a “substrate” like a silicon wafer.
Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice.
By removing the target material through etching, sputter targets are also utilized for investigation.
In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material’s composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Description

Silicon (Si) Sputtering Targets, P-type, indium

Purity: 99.999%, Size: 3”, Thickness: 0.125”

Sputtering is a tried-and-true method that can deposit thin films made of a broad range of materials onto a variety of substrate sizes and forms.
Sputter target processes are reproducible and can be expanded from small-scale R&D initiatives. The sputter target process can be modified to accommodate production batches with medium-to large substrate areas. The process parameters determine whether the chemical reaction takes place on the substrate, in flight, or on the target surface. Although there are numerous variables in sputter deposition, this complexity gives specialists great control over the region’s development and microstructure.

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